[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC8065Y":3},{"part":4,"mfr":20,"docs":26,"aliases":34,"alts":38,"breadcrumbs":39,"related":45,"more_from_mfr":70},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":15,"pins":8,"updated_at":16,"category_name":17,"category_name_en":18,"category_path":19},5093,"STPSC8065-Y","STPSC8065Y",null,"active","Automotive 650 V power Schottky silicon carbide diode",[12],[13,14],"工作温度","-40 ~ 175 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":21,"name_en":22,"name_cn":23,"website":24,"is_domestic":25},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[27],{"id":5,"filename":28,"title":10,"pages":29,"size_bytes":30,"lang":8,"doc_version":8,"published_at":8,"role":31,"outline_count":32,"thumb":33},"ST-STPSC8065Y.pdf",9,512961,"datasheet",0,"\u002Fthumbs\u002F92\u002F35\u002F9235df72f42d2cbb8479eba7d8f4cc8a6dbc58d9ca0b450c6db862629f7d0f31.jpg",[35],{"alias_norm":36,"kind":37},"STPSC8065","base",[],[40,44],{"name":41,"name_en":42,"path":43},"分立器件","Discretes","discrete",{"name":17,"name_en":18,"path":19},[46,48,51,54,57,60,63,67],{"pn_display":36,"pn_norm":36,"package":8,"summary":47},"650 V power Schottky silicon carbide diode",{"pn_display":49,"pn_norm":50,"package":8,"summary":8},"STPSC8C065D-L","STPSC8C065DL",{"pn_display":52,"pn_norm":52,"package":8,"summary":53},"STPSC8G065","650 V, 8 A high surge silicon carbide power Schottky diode",{"pn_display":55,"pn_norm":55,"package":56,"summary":53},"STPSC8H065","DPAK",{"pn_display":58,"pn_norm":58,"package":59,"summary":47},"STPSC8H065C","TO-220AB",{"pn_display":61,"pn_norm":61,"package":62,"summary":47},"STPSC8H065DLF","POWERFLAT8X8",{"pn_display":64,"pn_norm":65,"package":56,"summary":66},"STPSC8H065-Y","STPSC8H065Y","Automotive 650 V, 8 A high surge silicon carbide power Schottky diode",{"pn_display":68,"pn_norm":68,"package":8,"summary":69},"STPSC8TH13TI","Dual 650 V power Schottky silicon carbide diode in series",[71,74,78,82,86,90,93,95,99,103,106,109],{"pn_display":72,"pn_norm":72,"summary":73},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":75,"pn_norm":76,"summary":77},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":79,"pn_norm":80,"summary":81},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":83,"pn_norm":84,"summary":85},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":87,"pn_norm":88,"summary":89},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":91,"pn_norm":91,"summary":92},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":94,"pn_norm":94,"summary":92},"GANSPIN612",{"pn_display":96,"pn_norm":97,"summary":98},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":100,"pn_norm":101,"summary":102},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":104,"pn_norm":104,"summary":105},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":107,"pn_norm":107,"summary":108},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":110,"pn_norm":110,"summary":105},"MASTERGAN4L"]