[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC8065":3},{"part":4,"mfr":19,"docs":25,"aliases":33,"alts":37,"breadcrumbs":38,"related":44,"more_from_mfr":112},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},5094,"STPSC8065",null,"active","650 V power Schottky silicon carbide diode",[11],[12,13],"工作温度","-40 ~ 175 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[26],{"id":5,"filename":27,"title":9,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ST-STPSC8065.pdf",9,509301,"datasheet",0,"\u002Fthumbs\u002Fdc\u002F62\u002Fdc6256cb891b8810dabeba13fdcca010a3299f1766c5faae0b77ad4c1fb70e45.jpg",[34],{"alias_norm":35,"kind":36},"STPSC8065D","order",[],[39,43],{"name":40,"name_en":41,"path":42},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[45,48,52,56,60,63,67,70,73,75,77,80,83,87,90,94,98,102,105,108],{"pn_display":46,"pn_norm":46,"package":7,"summary":47},"STPSC10065","650 V, 10 A low VF power Schottky silicon carbide diode",{"pn_display":49,"pn_norm":49,"package":50,"summary":51},"STPSC10065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":53,"pn_norm":54,"package":7,"summary":55},"STPSC10065-Y","STPSC10065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":57,"pn_norm":58,"package":59,"summary":55},"STPSC10C065-Y","STPSC10C065Y","I2PAK",{"pn_display":61,"pn_norm":61,"package":7,"summary":62},"STPSC10G065","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":64,"pn_norm":65,"package":7,"summary":66},"STPSC10G065-Y","STPSC10G065Y","Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":68,"pn_norm":68,"package":69,"summary":62},"STPSC10H065","DPAK",{"pn_display":71,"pn_norm":72,"package":7,"summary":55},"STPSC10H065BY-TR","STPSC10H065BYTR",{"pn_display":74,"pn_norm":74,"package":50,"summary":51},"STPSC10H065DLF",{"pn_display":76,"pn_norm":76,"package":7,"summary":62},"STPSC10H065G2",{"pn_display":78,"pn_norm":79,"package":7,"summary":55},"STPSC10H065-Y","STPSC10H065Y",{"pn_display":81,"pn_norm":81,"package":69,"summary":82},"STPSC10H12","1200 V power Schottky silicon carbide diode",{"pn_display":84,"pn_norm":85,"package":69,"summary":86},"STPSC10H12B2-TR","STPSC10H12B2TR","1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":88,"pn_norm":88,"package":89,"summary":82},"STPSC10H12C","TO-247",{"pn_display":91,"pn_norm":92,"package":93,"summary":86},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":95,"pn_norm":96,"package":93,"summary":97},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":99,"pn_norm":100,"package":7,"summary":101},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",{"pn_display":103,"pn_norm":103,"package":7,"summary":104},"STPSC10TH13TI","Dual 650 V power Schottky silicon carbide diode in series",{"pn_display":106,"pn_norm":106,"package":7,"summary":107},"STPSC12065","650 V, 12 A power Schottky silicon carbide diode",{"pn_display":109,"pn_norm":110,"package":7,"summary":111},"STPSC12065-Y","STPSC12065Y","Automotive 650 V, 12 A, silicon carbide power Schottky diode",[113,116,120,123,125,129,132,135,138,142,145,148],{"pn_display":114,"pn_norm":114,"summary":115},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":117,"pn_norm":118,"summary":119},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":121,"pn_norm":121,"summary":122},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":124,"pn_norm":124,"summary":122},"GANSPIN612",{"pn_display":126,"pn_norm":127,"summary":128},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":130,"pn_norm":130,"summary":131},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":133,"pn_norm":133,"summary":134},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":136,"pn_norm":136,"summary":137},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":139,"pn_norm":140,"summary":141},"SCT018H65G3-7","SCT018H65G37","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package",{"pn_display":143,"pn_norm":143,"summary":144},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":146,"pn_norm":146,"summary":147},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":149,"pn_norm":149,"summary":150},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches"]