[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC6G065":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":72},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5088,"STPSC6G065",null,"active","650 V, 6 A high surge silicon carbide power Schottky diode",[11,14,17],[12,13],"工作温度","-55 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","6 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC6G065.pdf","Datasheet - STPSC6G065 - 650 V, 6 A high surge silicon carbide power Schottky diode",10,546390,"datasheet",12,"\u002Fthumbs\u002F4a\u002F45\u002F4a45d5ccafa1972960e9d68857b38a5d03f19c8e024b5d6c6fa4f5ddc92ba33e.jpg",[41],{"alias_norm":42,"kind":43},"STPSC6G065D","order",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[52,56,60,63,66,69],{"pn_display":53,"pn_norm":54,"package":7,"summary":55},"STPSC6C065D-L","STPSC6C065DL","650 V power Schottky silicon carbide diode",{"pn_display":57,"pn_norm":58,"package":7,"summary":59},"STPSC6C065-Y","STPSC6C065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":61,"package":62,"summary":9},"STPSC6H065","DPAK",{"pn_display":64,"pn_norm":65,"package":7,"summary":59},"STPSC6H065BY-TR","STPSC6H065BYTR",{"pn_display":67,"pn_norm":67,"package":68,"summary":55},"STPSC6H065DLF","POWERFLAT8X8",{"pn_display":70,"pn_norm":70,"package":7,"summary":71},"STPSC6TH13TI","Dual 650 V power Schottky silicon carbide diode in series",[73,76,79,82,85,88,91,93,95,98,100,103],{"pn_display":74,"pn_norm":74,"summary":75},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":77,"pn_norm":77,"summary":78},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":80,"pn_norm":80,"summary":81},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":83,"pn_norm":83,"summary":84},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":86,"pn_norm":86,"summary":87},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":89,"pn_norm":89,"summary":90},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":92,"pn_norm":92,"summary":90},"STDRIVEG211",{"pn_display":94,"pn_norm":94,"summary":90},"STDRIVEG212",{"pn_display":96,"pn_norm":96,"summary":97},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":99,"pn_norm":99,"summary":97},"STDRIVEG600W",{"pn_display":101,"pn_norm":101,"summary":102},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":104,"pn_norm":104,"summary":102},"STDRIVEG611"]