[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC6C065Y":3},{"part":4,"mfr":17,"docs":23,"aliases":31,"alts":35,"breadcrumbs":36,"related":42,"more_from_mfr":47},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":12,"pins":8,"updated_at":13,"category_name":14,"category_name_en":15,"category_path":16},5086,"STPSC6C065-Y","STPSC6C065Y",null,"active","Automotive 650 V power Schottky silicon carbide diode",[],[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":18,"name_en":19,"name_cn":20,"website":21,"is_domestic":22},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[24],{"id":5,"filename":25,"title":10,"pages":26,"size_bytes":27,"lang":8,"doc_version":8,"published_at":8,"role":28,"outline_count":29,"thumb":30},"ST-STPSC6C065Y.pdf",9,180802,"datasheet",22,"\u002Fthumbs\u002Fa0\u002F23\u002Fa0239fda98a0a9c3d5715e0395fcece2ebb7bde0b30e55705026cc068e2436dc.jpg",[32],{"alias_norm":33,"kind":34},"STPSC6C065","base",[],[37,41],{"name":38,"name_en":39,"path":40},"分立器件","Discretes","discrete",{"name":14,"name_en":15,"path":16},[43],{"pn_display":44,"pn_norm":45,"package":8,"summary":46},"STPSC6C065D-L","STPSC6C065DL","650 V power Schottky silicon carbide diode",[48,51,54,57,60,63,66,68,70,73,75,78],{"pn_display":49,"pn_norm":49,"summary":50},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":52,"pn_norm":52,"summary":53},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":55,"pn_norm":55,"summary":56},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":58,"pn_norm":58,"summary":59},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":61,"pn_norm":61,"summary":62},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":64,"pn_norm":64,"summary":65},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":67,"pn_norm":67,"summary":65},"STDRIVEG211",{"pn_display":69,"pn_norm":69,"summary":65},"STDRIVEG212",{"pn_display":71,"pn_norm":71,"summary":72},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":74,"pn_norm":74,"summary":72},"STDRIVEG600W",{"pn_display":76,"pn_norm":76,"summary":77},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":79,"pn_norm":79,"summary":77},"STDRIVEG611"]