[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC40H12C":3},{"part":4,"mfr":28,"docs":34,"aliases":42,"alts":49,"breadcrumbs":50,"related":56,"more_from_mfr":76},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5077,"STPSC40H12C",null,"TO-247","active","1200 V, 40 A power Schottky silicon carbide diode",[12,15,18,21],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","1200 V",[19,20],"ID","40 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":38,"thumb":41},"ST-STPSC40H12C.pdf","Datasheet - STPSC40H12C - 1200 V, 40 A power Schottky silicon carbide diode",10,446731,"datasheet","\u002Fthumbs\u002Fcb\u002Fb9\u002Fcbb9392bbcb930ad4682db68631753ae77e2555e8e9601c2752c89d4bbe518bb.jpg",[43,46],{"alias_norm":44,"kind":45},"STPSC40H12","base",{"alias_norm":47,"kind":48},"STPSC40H12CWL","order",[],[51,55],{"name":52,"name_en":53,"path":54},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[57,60,64,68,72],{"pn_display":58,"pn_norm":58,"package":8,"summary":59},"STPSC40065C","650 V power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":62,"package":8,"summary":63},"STPSC40065C-Y","STPSC40065CY","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":65,"pn_norm":65,"package":66,"summary":67},"STPSC40G12","DO-247","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":69,"pn_norm":70,"package":66,"summary":71},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":73,"pn_norm":74,"package":8,"summary":75},"STPSC40H12C-Y","STPSC40H12CY","40 A 1200 V power Schottky silicon carbide diode",[77,80,83,87,91,95,99,102,104,108,112,115],{"pn_display":78,"pn_norm":78,"summary":79},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":81,"pn_norm":81,"summary":82},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":84,"pn_norm":85,"summary":86},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":88,"pn_norm":89,"summary":90},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":92,"pn_norm":93,"summary":94},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":96,"pn_norm":97,"summary":98},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":100,"pn_norm":100,"summary":101},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":103,"pn_norm":103,"summary":101},"GANSPIN612",{"pn_display":105,"pn_norm":106,"summary":107},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":109,"pn_norm":110,"summary":111},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":113,"pn_norm":113,"summary":114},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":116,"pn_norm":116,"summary":117},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT"]