[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC40065C":3},{"part":4,"mfr":19,"docs":25,"aliases":33,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":67},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},5073,"STPSC40065C",null,"TO-247","active","650 V power Schottky silicon carbide diode",[12],[13,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[26],{"id":5,"filename":27,"title":10,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ST-STPSC40065C.pdf",9,462465,"datasheet",0,"\u002Fthumbs\u002F07\u002Fc7\u002F07c7074d0d377a44f7fff8931ec1e2d9cd4ea3b309167e0a590e045cc873bf67.jpg",[34,37],{"alias_norm":35,"kind":36},"STPSC40065","base",{"alias_norm":38,"kind":39},"STPSC40065CW","order",[],[42,46],{"name":43,"name_en":44,"path":45},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[48,52,56,60,63],{"pn_display":49,"pn_norm":50,"package":8,"summary":51},"STPSC40065C-Y","STPSC40065CY","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":53,"pn_norm":53,"package":54,"summary":55},"STPSC40G12","DO-247","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":57,"pn_norm":58,"package":54,"summary":59},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":61,"pn_norm":61,"package":8,"summary":62},"STPSC40H12C","1200 V, 40 A power Schottky silicon carbide diode",{"pn_display":64,"pn_norm":65,"package":8,"summary":66},"STPSC40H12C-Y","STPSC40H12CY","40 A 1200 V power Schottky silicon carbide diode",[68,71,74,77,80,83,86,88,90,93,95,98],{"pn_display":69,"pn_norm":69,"summary":70},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":72,"pn_norm":72,"summary":73},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":75,"pn_norm":75,"summary":76},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":78,"pn_norm":78,"summary":79},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":81,"pn_norm":81,"summary":82},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":84,"pn_norm":84,"summary":85},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":87,"pn_norm":87,"summary":85},"STDRIVEG211",{"pn_display":89,"pn_norm":89,"summary":85},"STDRIVEG212",{"pn_display":91,"pn_norm":91,"summary":92},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":94,"pn_norm":94,"summary":92},"STDRIVEG600W",{"pn_display":96,"pn_norm":96,"summary":97},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":99,"pn_norm":99,"summary":97},"STDRIVEG611"]