[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC30G12Y":3},{"part":4,"mfr":29,"docs":35,"aliases":44,"alts":48,"breadcrumbs":49,"related":55,"more_from_mfr":74},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":24,"pins":8,"updated_at":25,"category_name":26,"category_name_en":27,"category_path":28},5068,"STPSC30G12-Y","STPSC30G12Y",null,"DO-247","active","Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode",[13,16,19,22],[14,15],"工作温度","-55 ~ 175 °C",[17,18],"VDS","1200 V",[20,21],"ID","30 A",[23,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":30,"name_en":31,"name_cn":32,"website":33,"is_domestic":34},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[36],{"id":5,"filename":37,"title":38,"pages":39,"size_bytes":40,"lang":8,"doc_version":8,"published_at":8,"role":41,"outline_count":42,"thumb":43},"ST-STPSC30G12Y.pdf","Datasheet - STPSC30G12-Y - Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode",10,499958,"datasheet",9,"\u002Fthumbs\u002F4d\u002Fde\u002F4dde90f844a71aded3e6a08bd3b2e591a730435f83f5fc69bd45e037d75abc16.jpg",[45],{"alias_norm":46,"kind":47},"STPSC30G12","base",[],[50,54],{"name":51,"name_en":52,"path":53},"分立器件","Discretes","discrete",{"name":26,"name_en":27,"path":28},[56,59,62,65,68,70],{"pn_display":57,"pn_norm":57,"package":9,"summary":58},"STPSC30G065","650 V, 30 A high surge silicon carbide power Schottky diode",{"pn_display":60,"pn_norm":60,"package":61,"summary":58},"STPSC30G065G2Y","D2PAK",{"pn_display":63,"pn_norm":63,"package":8,"summary":64},"STPSC30G065L2Y","Automotive 650 V, 30 A high surge silicon carbide power Schottky diode",{"pn_display":66,"pn_norm":67,"package":9,"summary":64},"STPSC30G065-Y","STPSC30G065Y",{"pn_display":46,"pn_norm":46,"package":9,"summary":69},"1200 V, 30 A power Schottky high surge silicon carbide diode",{"pn_display":71,"pn_norm":71,"package":72,"summary":73},"STPSC30H12C","TO-247","1200 V power Schottky silicon carbide diode",[75,78,82,86,90,94,97,99,103,107,110,113],{"pn_display":76,"pn_norm":76,"summary":77},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":79,"pn_norm":80,"summary":81},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":83,"pn_norm":84,"summary":85},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":87,"pn_norm":88,"summary":89},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":91,"pn_norm":92,"summary":93},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":95,"pn_norm":95,"summary":96},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":98,"pn_norm":98,"summary":96},"GANSPIN612",{"pn_display":100,"pn_norm":101,"summary":102},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":104,"pn_norm":105,"summary":106},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":108,"pn_norm":108,"summary":109},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":111,"pn_norm":111,"summary":112},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":114,"pn_norm":114,"summary":109},"MASTERGAN4L"]