[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC30G065":3},{"part":4,"mfr":28,"docs":34,"aliases":43,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":75},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5065,"STPSC30G065",null,"DO-247","active","650 V, 30 A high surge silicon carbide power Schottky diode",[12,15,18,21],[13,14],"工作温度","-55 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","30 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":41,"thumb":42},"ST-STPSC30G065.pdf","Datasheet - STPSC30G065 -  650 V, 30 A high surge silicon carbide power Schottky diode",10,669940,"datasheet",12,"\u002Fthumbs\u002F88\u002F5a\u002F885a9f1a2e637ad1213f2fe23550fb0a4ac78e96718143a256d1a739e23fc567.jpg",[44],{"alias_norm":45,"kind":46},"STPSC30G065WL","order",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[55,58,61,64,67,71],{"pn_display":56,"pn_norm":56,"package":57,"summary":10},"STPSC30G065G2Y","D2PAK",{"pn_display":59,"pn_norm":59,"package":7,"summary":60},"STPSC30G065L2Y","Automotive 650 V, 30 A high surge silicon carbide power Schottky diode",{"pn_display":62,"pn_norm":63,"package":8,"summary":60},"STPSC30G065-Y","STPSC30G065Y",{"pn_display":65,"pn_norm":65,"package":8,"summary":66},"STPSC30G12","1200 V, 30 A power Schottky high surge silicon carbide diode",{"pn_display":68,"pn_norm":69,"package":8,"summary":70},"STPSC30G12-Y","STPSC30G12Y","Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode",{"pn_display":72,"pn_norm":72,"package":73,"summary":74},"STPSC30H12C","TO-247","1200 V power Schottky silicon carbide diode",[76,79,83,87,91,95,98,100,104,108,111,114],{"pn_display":77,"pn_norm":77,"summary":78},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":80,"pn_norm":81,"summary":82},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":84,"pn_norm":85,"summary":86},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":88,"pn_norm":89,"summary":90},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":92,"pn_norm":93,"summary":94},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":96,"pn_norm":96,"summary":97},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":99,"pn_norm":99,"summary":97},"GANSPIN612",{"pn_display":101,"pn_norm":102,"summary":103},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":105,"pn_norm":106,"summary":107},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":109,"pn_norm":109,"summary":110},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":112,"pn_norm":112,"summary":113},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":115,"pn_norm":115,"summary":110},"MASTERGAN4L"]