[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC2H12Y":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":119},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},5062,"STPSC2H12-Y","STPSC2H12Y",null,"active","Automotive 1200 V, 2 A power Schottky silicon carbide diode",[12,15,18],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","1200 V",[19,20],"ID","2 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-STPSC2H12Y.pdf","Datasheet - STPSC2H12-Y - Automotive 1200 V, 2 A power Schottky silicon carbide diode",10,301495,"datasheet",13,"\u002Fthumbs\u002F1e\u002Fc3\u002F1ec37a044c8681f4f2c4c09cb4b17d6c8d8d3c8ea2569b1c053539e051da3cfd.jpg",[42],{"alias_norm":43,"kind":44},"STPSC2H12","base",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[53,57,61,65,68,71,75,78,81,84,87,90,93,96,99,102,106,110,113,117],{"pn_display":54,"pn_norm":54,"package":55,"summary":56},"STPSC20065","DO-247","650 V power Schottky silicon carbide diode",{"pn_display":58,"pn_norm":58,"package":59,"summary":60},"STPSC20065C","TO-247","650 V, dual 10 A, power Schottky silicon carbide diode",{"pn_display":62,"pn_norm":63,"package":55,"summary":64},"STPSC20065-Y","STPSC20065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":66,"pn_norm":66,"package":59,"summary":67},"STPSC2006CW","600 V power Schottky silicon carbide diode",{"pn_display":69,"pn_norm":69,"package":55,"summary":70},"STPSC20G065","650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":73,"package":55,"summary":74},"STPSC20G065-Y","STPSC20G065Y","Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":76,"pn_norm":76,"package":55,"summary":77},"STPSC20G12","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":79,"pn_norm":79,"package":8,"summary":80},"STPSC20G12L2Y","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":82,"pn_norm":83,"package":55,"summary":80},"STPSC20G12-Y","STPSC20G12Y",{"pn_display":85,"pn_norm":85,"package":86,"summary":56},"STPSC20H065C","TO-220AB",{"pn_display":88,"pn_norm":88,"package":59,"summary":89},"STPSC20H065CWLY","Automotive 20 A 650 V power Schottky silicon carbide diode",{"pn_display":91,"pn_norm":92,"package":86,"summary":64},"STPSC20H065C-Y","STPSC20H065CY",{"pn_display":94,"pn_norm":94,"package":59,"summary":95},"STPSC20H12","1200 V, 20 A power Schottky silicon carbide diode",{"pn_display":97,"pn_norm":97,"package":59,"summary":98},"STPSC20H12C","1200 V power Schottky silicon carbide diode",{"pn_display":100,"pn_norm":100,"package":59,"summary":101},"STPSC20H12CWY","20 A 1200 V power Schottky silicon carbide diode",{"pn_display":103,"pn_norm":104,"package":8,"summary":105},"STPSC20H12G2-TR","STPSC20H12G2TR","1200 V, 20 A, silicon carbide power Schottky diode",{"pn_display":107,"pn_norm":108,"package":8,"summary":109},"STPSC20H12-Y","STPSC20H12Y","Automotive 1200 V, 20 A, silicon carbide power Schottky diode",{"pn_display":111,"pn_norm":111,"package":8,"summary":112},"STPSC2H065","650 V, 2 A high surge silicon carbide power Schottky diode",{"pn_display":114,"pn_norm":115,"package":8,"summary":116},"STPSC2H065-Y","STPSC2H065Y","Automotive 650 V, 2 A high surge silicon carbide power Schottky diode",{"pn_display":43,"pn_norm":43,"package":118,"summary":98},"DPAK",[120,123,127,131,135,139,142,144,148,152,155,158],{"pn_display":121,"pn_norm":121,"summary":122},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":124,"pn_norm":125,"summary":126},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. 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SiC Power MOSFET with NTC",{"pn_display":149,"pn_norm":150,"summary":151},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":153,"pn_norm":153,"summary":154},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":156,"pn_norm":156,"summary":157},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":159,"pn_norm":159,"summary":154},"MASTERGAN4L"]