[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20H12Y":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":105},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},5055,"STPSC20H12-Y","STPSC20H12Y",null,"active","Automotive 1200 V, 20 A, silicon carbide power Schottky diode",[12,15,18],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","1200 V",[19,20],"ID","20 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-STPSC20H12Y.pdf","Datasheet - STPSC20H12-Y - Automotive 1200 V, 20 A, silicon carbide power Schottky diode",14,473769,"datasheet",9,"\u002Fthumbs\u002Fa9\u002F0e\u002Fa90e9998e0a8c6889564d9631111ed216dd329350ee967b7bfc0a3fd8b339572.jpg",[42],{"alias_norm":43,"kind":44},"STPSC20H12","base",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[53,57,61,65,68,71,75,78,81,84,87,90,93,95,98,101],{"pn_display":54,"pn_norm":54,"package":55,"summary":56},"STPSC20065","DO-247","650 V power Schottky silicon carbide diode",{"pn_display":58,"pn_norm":58,"package":59,"summary":60},"STPSC20065C","TO-247","650 V, dual 10 A, power Schottky silicon carbide diode",{"pn_display":62,"pn_norm":63,"package":55,"summary":64},"STPSC20065-Y","STPSC20065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":66,"pn_norm":66,"package":59,"summary":67},"STPSC2006CW","600 V power Schottky silicon carbide diode",{"pn_display":69,"pn_norm":69,"package":55,"summary":70},"STPSC20G065","650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":73,"package":55,"summary":74},"STPSC20G065-Y","STPSC20G065Y","Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":76,"pn_norm":76,"package":55,"summary":77},"STPSC20G12","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":79,"pn_norm":79,"package":8,"summary":80},"STPSC20G12L2Y","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":82,"pn_norm":83,"package":55,"summary":80},"STPSC20G12-Y","STPSC20G12Y",{"pn_display":85,"pn_norm":85,"package":86,"summary":56},"STPSC20H065C","TO-220AB",{"pn_display":88,"pn_norm":88,"package":59,"summary":89},"STPSC20H065CWLY","Automotive 20 A 650 V power Schottky silicon carbide diode",{"pn_display":91,"pn_norm":92,"package":86,"summary":64},"STPSC20H065C-Y","STPSC20H065CY",{"pn_display":43,"pn_norm":43,"package":59,"summary":94},"1200 V, 20 A power Schottky silicon carbide diode",{"pn_display":96,"pn_norm":96,"package":59,"summary":97},"STPSC20H12C","1200 V power Schottky silicon carbide diode",{"pn_display":99,"pn_norm":99,"package":59,"summary":100},"STPSC20H12CWY","20 A 1200 V power Schottky silicon carbide diode",{"pn_display":102,"pn_norm":103,"package":8,"summary":104},"STPSC20H12G2-TR","STPSC20H12G2TR","1200 V, 20 A, silicon carbide power Schottky diode",[106,109,112,115,118,121,124,126,128,131,133,136],{"pn_display":107,"pn_norm":107,"summary":108},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":110,"pn_norm":110,"summary":111},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":113,"pn_norm":113,"summary":114},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":116,"pn_norm":116,"summary":117},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":119,"pn_norm":119,"summary":120},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":122,"pn_norm":122,"summary":123},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":125,"pn_norm":125,"summary":123},"STDRIVEG211",{"pn_display":127,"pn_norm":127,"summary":123},"STDRIVEG212",{"pn_display":129,"pn_norm":129,"summary":130},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":132,"pn_norm":132,"summary":130},"STDRIVEG600W",{"pn_display":134,"pn_norm":134,"summary":135},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":137,"pn_norm":137,"summary":135},"STDRIVEG611"]