[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20H065CWLY":3},{"part":4,"mfr":22,"docs":28,"aliases":37,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":62},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},5054,"STPSC20H065CWLY",null,"TO-247","active","Automotive 20 A 650 V power Schottky silicon carbide diode",[12,15],[13,14],"工作温度","-40 ~ 175 °C",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":24,"name_cn":25,"website":26,"is_domestic":27},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[29],{"id":5,"filename":30,"title":31,"pages":32,"size_bytes":33,"lang":7,"doc_version":7,"published_at":7,"role":34,"outline_count":35,"thumb":36},"ST-STPSC20H065CWLY.pdf","Datasheet - STPSC20H065CWLY - Automotive 20 A 650 V power Schottky silicon carbide diode",10,255464,"datasheet",6,"\u002Fthumbs\u002Fc7\u002F32\u002Fc732dae8876f46a20066782946f6cf26ae82aaf881381ec79182233db0daa6bd.jpg",[38,41,43,45],{"alias_norm":39,"kind":40},"STPSC20H065","base",{"alias_norm":42,"kind":40},"STPSC20H065C",{"alias_norm":44,"kind":40},"STPSC20H065CW",{"alias_norm":46,"kind":40},"STPSC20H065CWL",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[55,58],{"pn_display":42,"pn_norm":42,"package":56,"summary":57},"TO-220AB","650 V power Schottky silicon carbide diode",{"pn_display":59,"pn_norm":60,"package":56,"summary":61},"STPSC20H065C-Y","STPSC20H065CY","Automotive 650 V power Schottky silicon carbide diode",[63,66,69,72,75,77,79,82,84,88,92,95],{"pn_display":64,"pn_norm":64,"summary":65},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":67,"pn_norm":67,"summary":68},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":70,"pn_norm":70,"summary":71},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":73,"pn_norm":73,"summary":74},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":76,"pn_norm":76,"summary":74},"STDRIVEG211",{"pn_display":78,"pn_norm":78,"summary":74},"STDRIVEG212",{"pn_display":80,"pn_norm":80,"summary":81},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":83,"pn_norm":83,"summary":81},"STDRIVEG611",{"pn_display":85,"pn_norm":86,"summary":87},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":89,"pn_norm":90,"summary":91},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":93,"pn_norm":93,"summary":94},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections",{"pn_display":96,"pn_norm":96,"summary":97},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors"]