[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20G12L2Y":3},{"part":4,"mfr":25,"docs":31,"aliases":39,"alts":43,"breadcrumbs":44,"related":50,"more_from_mfr":58},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5051,"STPSC20G12L2Y",null,"active","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",[11,14,17],[12,13],"工作温度","-55 ~ 175 °C",[15,16],"VDS","1200 V",[18,19],"ID","20 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":35,"thumb":38},"ST-STPSC20G12L2Y.pdf","Datasheet - STPSC20G12L2Y - Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",11,543277,"datasheet","\u002Fthumbs\u002F8a\u002F39\u002F8a398cecb3c524014ac596ab9a86270d439243bd7488221c57f4db6591ea128a.jpg",[40],{"alias_norm":41,"kind":42},"STPSC20G12L2","base",[],[45,49],{"name":46,"name_en":47,"path":48},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[51,55],{"pn_display":52,"pn_norm":52,"package":53,"summary":54},"STPSC20G12","DO-247","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":56,"pn_norm":57,"package":53,"summary":9},"STPSC20G12-Y","STPSC20G12Y",[59,62,66,70,73,75,79,83,86,89,91,94],{"pn_display":60,"pn_norm":60,"summary":61},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":63,"pn_norm":64,"summary":65},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":67,"pn_norm":68,"summary":69},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":71,"pn_norm":71,"summary":72},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":74,"pn_norm":74,"summary":72},"GANSPIN612",{"pn_display":76,"pn_norm":77,"summary":78},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":80,"pn_norm":81,"summary":82},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":84,"pn_norm":84,"summary":85},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":87,"pn_norm":87,"summary":88},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":90,"pn_norm":90,"summary":85},"MASTERGAN4L",{"pn_display":92,"pn_norm":92,"summary":93},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":95,"pn_norm":96,"summary":97},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]