[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20G065Y":3},{"part":4,"mfr":29,"docs":35,"aliases":44,"alts":48,"breadcrumbs":49,"related":55,"more_from_mfr":67},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":24,"pins":8,"updated_at":25,"category_name":26,"category_name_en":27,"category_path":28},5047,"STPSC20G065-Y","STPSC20G065Y",null,"DO-247","active","Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",[13,16,19,22],[14,15],"工作温度","-55 ~ 175 °C",[17,18],"VDS","650 V",[20,21],"ID","20 A",[23,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":30,"name_en":31,"name_cn":32,"website":33,"is_domestic":34},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[36],{"id":5,"filename":37,"title":38,"pages":39,"size_bytes":40,"lang":8,"doc_version":8,"published_at":8,"role":41,"outline_count":42,"thumb":43},"ST-STPSC20G065Y.pdf","Datasheet - STPSC20G065-Y - Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",12,790834,"datasheet",13,"\u002Fthumbs\u002F5f\u002F92\u002F5f92c1b7bf39c2780e37ee383a7351f8e4fbfeb3a7c06070b4912f30170666cd.jpg",[45],{"alias_norm":46,"kind":47},"STPSC20G065","base",[],[50,54],{"name":51,"name_en":52,"path":53},"分立器件","Discretes","discrete",{"name":26,"name_en":27,"path":28},[56,58,61,64],{"pn_display":46,"pn_norm":46,"package":9,"summary":57},"650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":59,"pn_norm":59,"package":9,"summary":60},"STPSC20G12","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":62,"pn_norm":62,"package":8,"summary":63},"STPSC20G12L2Y","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":65,"pn_norm":66,"package":9,"summary":63},"STPSC20G12-Y","STPSC20G12Y",[68,71,75,79,82,84,88,92,95,98,100,103],{"pn_display":69,"pn_norm":69,"summary":70},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":72,"pn_norm":73,"summary":74},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":76,"pn_norm":77,"summary":78},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":80,"pn_norm":80,"summary":81},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":83,"pn_norm":83,"summary":81},"GANSPIN612",{"pn_display":85,"pn_norm":86,"summary":87},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":89,"pn_norm":90,"summary":91},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":93,"pn_norm":93,"summary":94},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":96,"pn_norm":96,"summary":97},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":99,"pn_norm":99,"summary":94},"MASTERGAN4L",{"pn_display":101,"pn_norm":101,"summary":102},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":104,"pn_norm":105,"summary":106},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]