[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20065Y":3},{"part":4,"mfr":23,"docs":29,"aliases":37,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":100},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},5043,"STPSC20065-Y","STPSC20065Y",null,"DO-247","active","Automotive 650 V power Schottky silicon carbide diode",[13,16],[14,15],"工作温度","-40 ~ 175 °C",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":11,"pages":32,"size_bytes":33,"lang":8,"doc_version":8,"published_at":8,"role":34,"outline_count":35,"thumb":36},"ST-STPSC20065Y.pdf",14,627953,"datasheet",0,"\u002Fthumbs\u002Faf\u002Fbc\u002Fafbc4b710487879b960a84e6dd2414034571a1d04c501c398c42f99805ba5890.jpg",[38],{"alias_norm":39,"kind":40},"STPSC20065","base",[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[49,51,55,58,61,65,68,71,74,77,80,83,86,89,92,96],{"pn_display":39,"pn_norm":39,"package":9,"summary":50},"650 V power Schottky silicon carbide diode",{"pn_display":52,"pn_norm":52,"package":53,"summary":54},"STPSC20065C","TO-247","650 V, dual 10 A, power Schottky silicon carbide diode",{"pn_display":56,"pn_norm":56,"package":53,"summary":57},"STPSC2006CW","600 V power Schottky silicon carbide diode",{"pn_display":59,"pn_norm":59,"package":9,"summary":60},"STPSC20G065","650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":62,"pn_norm":63,"package":9,"summary":64},"STPSC20G065-Y","STPSC20G065Y","Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":66,"pn_norm":66,"package":9,"summary":67},"STPSC20G12","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":69,"pn_norm":69,"package":8,"summary":70},"STPSC20G12L2Y","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":72,"pn_norm":73,"package":9,"summary":70},"STPSC20G12-Y","STPSC20G12Y",{"pn_display":75,"pn_norm":75,"package":76,"summary":50},"STPSC20H065C","TO-220AB",{"pn_display":78,"pn_norm":78,"package":53,"summary":79},"STPSC20H065CWLY","Automotive 20 A 650 V power Schottky silicon carbide diode",{"pn_display":81,"pn_norm":82,"package":76,"summary":11},"STPSC20H065C-Y","STPSC20H065CY",{"pn_display":84,"pn_norm":84,"package":53,"summary":85},"STPSC20H12","1200 V, 20 A power Schottky silicon carbide diode",{"pn_display":87,"pn_norm":87,"package":53,"summary":88},"STPSC20H12C","1200 V power Schottky silicon carbide diode",{"pn_display":90,"pn_norm":90,"package":53,"summary":91},"STPSC20H12CWY","20 A 1200 V power Schottky silicon carbide diode",{"pn_display":93,"pn_norm":94,"package":8,"summary":95},"STPSC20H12G2-TR","STPSC20H12G2TR","1200 V, 20 A, silicon carbide power Schottky diode",{"pn_display":97,"pn_norm":98,"package":8,"summary":99},"STPSC20H12-Y","STPSC20H12Y","Automotive 1200 V, 20 A, silicon carbide power Schottky diode",[101,104,107,110,114,118,122,126,129,131,135,139],{"pn_display":102,"pn_norm":102,"summary":103},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":105,"pn_norm":105,"summary":106},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":108,"pn_norm":108,"summary":109},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":111,"pn_norm":112,"summary":113},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":115,"pn_norm":116,"summary":117},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":119,"pn_norm":120,"summary":121},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":123,"pn_norm":124,"summary":125},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":127,"pn_norm":127,"summary":128},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":130,"pn_norm":130,"summary":128},"GANSPIN612",{"pn_display":132,"pn_norm":133,"summary":134},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":136,"pn_norm":137,"summary":138},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":140,"pn_norm":140,"summary":141},"MASTERGAN1","High power density 600V Half bridge driver with two enhancement mode GaN HEMT"]