[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC16H065A":3},{"part":4,"mfr":22,"docs":28,"aliases":37,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":55},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},5041,"STPSC16H065A",null,"TO-247","active","650 V power Schottky silicon carbide rectifier",[12,15],[13,14],"工作温度","-40 ~ 175 °C",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":24,"name_cn":25,"website":26,"is_domestic":27},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[29],{"id":5,"filename":30,"title":31,"pages":32,"size_bytes":33,"lang":7,"doc_version":7,"published_at":7,"role":34,"outline_count":35,"thumb":36},"ST-STPSC16H065A.pdf","Datasheet - STPSC16H065A  - 650 V power Schottky silicon carbide rectifier",9,236858,"datasheet",6,"\u002Fthumbs\u002F7f\u002F43\u002F7f43c1637b124fb329d9fe72159a143de5b2d3649fafa33477118d98c1946ed6.jpg",[38,41],{"alias_norm":39,"kind":40},"STPSC16H065","base",{"alias_norm":42,"kind":43},"STPSC16H065AW","order",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[52],{"pn_display":53,"pn_norm":53,"package":7,"summary":54},"STPSC16H065C","650 V power Schottky silicon carbide diode",[56,59,63,67,71,74,76,80,84,87,90,92],{"pn_display":57,"pn_norm":57,"summary":58},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":60,"pn_norm":61,"summary":62},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":64,"pn_norm":65,"summary":66},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":68,"pn_norm":69,"summary":70},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":72,"pn_norm":72,"summary":73},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":75,"pn_norm":75,"summary":73},"GANSPIN612",{"pn_display":77,"pn_norm":78,"summary":79},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":81,"pn_norm":82,"summary":83},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":85,"pn_norm":85,"summary":86},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":88,"pn_norm":88,"summary":89},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":91,"pn_norm":91,"summary":86},"MASTERGAN4L",{"pn_display":93,"pn_norm":93,"summary":94},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections"]