[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC16G065Y":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":55},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},5039,"STPSC16G065-Y","STPSC16G065Y",null,"active","Automotive 650 V, 16 A high surge silicon carbide power Schottky diode",[12,15,18],[13,14],"工作温度","-55 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","16 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-STPSC16G065Y.pdf","Datasheet - STPSC16G065-Y - Automotive 650 V, 16 A high surge silicon carbide power Schottky diode",10,567316,"datasheet",12,"\u002Fthumbs\u002F5a\u002F99\u002F5a99417ddeff499abf0c875e278d80994f6cd87d1a0635c56ad9f6e413ef2fb2.jpg",[42],{"alias_norm":43,"kind":44},"STPSC16G065","base",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[53],{"pn_display":43,"pn_norm":43,"package":8,"summary":54},"650 V, 16 A high surge silicon carbide power Schottky diode",[56,59,63,67,71,75,78,80,84,88,91,94],{"pn_display":57,"pn_norm":57,"summary":58},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":60,"pn_norm":61,"summary":62},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":64,"pn_norm":65,"summary":66},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":68,"pn_norm":69,"summary":70},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":72,"pn_norm":73,"summary":74},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":76,"pn_norm":76,"summary":77},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":79,"pn_norm":79,"summary":77},"GANSPIN612",{"pn_display":81,"pn_norm":82,"summary":83},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":85,"pn_norm":86,"summary":87},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":89,"pn_norm":89,"summary":90},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":92,"pn_norm":92,"summary":93},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":95,"pn_norm":95,"summary":90},"MASTERGAN4L"]