[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC16G065":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":63},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5040,"STPSC16G065",null,"active","650 V, 16 A high surge silicon carbide power Schottky diode",[11,14,17],[12,13],"工作温度","-55 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","16 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC16G065.pdf","Datasheet - STPSC16G065 - 650 V, 16 A high surge silicon carbide power Schottky diode",10,560994,"datasheet",12,"\u002Fthumbs\u002F1f\u002Faf\u002F1faf8019b148363fdf4685472fabd11215097e3daaf97ccfd8778a00a1e12a20.jpg",[41],{"alias_norm":42,"kind":43},"STPSC16G065D","order",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[52,56,60],{"pn_display":53,"pn_norm":54,"package":7,"summary":55},"STPSC16G065-Y","STPSC16G065Y","Automotive 650 V, 16 A high surge silicon carbide power Schottky diode",{"pn_display":57,"pn_norm":57,"package":58,"summary":59},"STPSC16H065A","TO-247","650 V power Schottky silicon carbide rectifier",{"pn_display":61,"pn_norm":61,"package":7,"summary":62},"STPSC16H065C","650 V power Schottky silicon carbide diode",[64,67,70,73,77,80,84,88,92,96,99,101],{"pn_display":65,"pn_norm":65,"summary":66},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":68,"pn_norm":68,"summary":69},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":71,"pn_norm":71,"summary":72},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":74,"pn_norm":75,"summary":76},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":78,"pn_norm":78,"summary":79},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":81,"pn_norm":82,"summary":83},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":85,"pn_norm":86,"summary":87},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":89,"pn_norm":90,"summary":91},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":93,"pn_norm":94,"summary":95},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":97,"pn_norm":97,"summary":98},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":100,"pn_norm":100,"summary":98},"GANSPIN612",{"pn_display":102,"pn_norm":103,"summary":104},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]