[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC15H12Y":3},{"part":4,"mfr":20,"docs":26,"aliases":34,"alts":38,"breadcrumbs":39,"related":45,"more_from_mfr":58},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":15,"pins":8,"updated_at":16,"category_name":17,"category_name_en":18,"category_path":19},5035,"STPSC15H12-Y","STPSC15H12Y",null,"active","Automotive grade 1200 V power Schottky silicon carbide diode",[12],[13,14],"工作温度","-40 ~ 175 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":21,"name_en":22,"name_cn":23,"website":24,"is_domestic":25},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[27],{"id":5,"filename":28,"title":10,"pages":29,"size_bytes":30,"lang":8,"doc_version":8,"published_at":8,"role":31,"outline_count":32,"thumb":33},"ST-STPSC15H12Y.pdf",8,411969,"datasheet",0,"\u002Fthumbs\u002F88\u002Fa4\u002F88a4ab96c2741e0c0b2564d5fd3df14211b4da5513afc99e2bc83ddbcbfacb23.jpg",[35],{"alias_norm":36,"kind":37},"STPSC15H12","base",[],[40,44],{"name":41,"name_en":42,"path":43},"分立器件","Discretes","discrete",{"name":17,"name_en":18,"path":19},[46,49,53],{"pn_display":36,"pn_norm":36,"package":47,"summary":48},"DO-247","1200 V, 15 A power Schottky silicon carbide diode",{"pn_display":50,"pn_norm":51,"package":8,"summary":52},"STPSC15H12G2-TR","STPSC15H12G2TR","1200 V, 15 A, silicon carbide power Schottky diode",{"pn_display":54,"pn_norm":55,"package":56,"summary":57},"STPSC15H12G2Y-TR","STPSC15H12G2YTR","D2PAK","Automotive 1200 V, 15 A, silicon carbide power Schottky diode",[59,62,65,69,72,76,80,84,88,91,93,97],{"pn_display":60,"pn_norm":60,"summary":61},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":63,"pn_norm":63,"summary":64},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":66,"pn_norm":67,"summary":68},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":70,"pn_norm":70,"summary":71},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":73,"pn_norm":74,"summary":75},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":77,"pn_norm":78,"summary":79},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":81,"pn_norm":82,"summary":83},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":85,"pn_norm":86,"summary":87},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":89,"pn_norm":89,"summary":90},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":92,"pn_norm":92,"summary":90},"GANSPIN612",{"pn_display":94,"pn_norm":95,"summary":96},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":98,"pn_norm":99,"summary":100},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC"]