[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC15H12":3},{"part":4,"mfr":28,"docs":34,"aliases":43,"alts":49,"breadcrumbs":50,"related":56,"more_from_mfr":124},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5036,"STPSC15H12",null,"DO-247","active","1200 V, 15 A power Schottky silicon carbide diode",[12,15,18,21],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","1200 V",[19,20],"ID","15 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":41,"thumb":42},"ST-STPSC15H12.pdf","Datasheet - STPSC15H12 - 1200 V, 15 A power Schottky silicon carbide diode",12,300122,"datasheet",7,"\u002Fthumbs\u002Fb2\u002F5a\u002Fb25a3e6ae8bc7f4d1f1535a37fdb8ffff5392ca49f7d2b9cddbf481bd96834d1.jpg",[44,47],{"alias_norm":45,"kind":46},"STPSC15H12D","order",{"alias_norm":48,"kind":46},"STPSC15H12WL",[],[51,55],{"name":52,"name_en":53,"path":54},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[57,60,64,68,72,75,79,82,85,87,89,92,95,99,102,106,110,114,117,120],{"pn_display":58,"pn_norm":58,"package":7,"summary":59},"STPSC10065","650 V, 10 A low VF power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":61,"package":62,"summary":63},"STPSC10065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":65,"pn_norm":66,"package":7,"summary":67},"STPSC10065-Y","STPSC10065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":69,"pn_norm":70,"package":71,"summary":67},"STPSC10C065-Y","STPSC10C065Y","I2PAK",{"pn_display":73,"pn_norm":73,"package":7,"summary":74},"STPSC10G065","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":76,"pn_norm":77,"package":7,"summary":78},"STPSC10G065-Y","STPSC10G065Y","Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":80,"pn_norm":80,"package":81,"summary":74},"STPSC10H065","DPAK",{"pn_display":83,"pn_norm":84,"package":7,"summary":67},"STPSC10H065BY-TR","STPSC10H065BYTR",{"pn_display":86,"pn_norm":86,"package":62,"summary":63},"STPSC10H065DLF",{"pn_display":88,"pn_norm":88,"package":7,"summary":74},"STPSC10H065G2",{"pn_display":90,"pn_norm":91,"package":7,"summary":67},"STPSC10H065-Y","STPSC10H065Y",{"pn_display":93,"pn_norm":93,"package":81,"summary":94},"STPSC10H12","1200 V power Schottky silicon carbide diode",{"pn_display":96,"pn_norm":97,"package":81,"summary":98},"STPSC10H12B2-TR","STPSC10H12B2TR","1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":100,"pn_norm":100,"package":101,"summary":94},"STPSC10H12C","TO-247",{"pn_display":103,"pn_norm":104,"package":105,"summary":98},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":107,"pn_norm":108,"package":105,"summary":109},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":111,"pn_norm":112,"package":7,"summary":113},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",{"pn_display":115,"pn_norm":115,"package":7,"summary":116},"STPSC10TH13TI","Dual 650 V power Schottky silicon carbide diode in series",{"pn_display":118,"pn_norm":118,"package":7,"summary":119},"STPSC12065","650 V, 12 A power Schottky silicon carbide diode",{"pn_display":121,"pn_norm":122,"package":7,"summary":123},"STPSC12065-Y","STPSC12065Y","Automotive 650 V, 12 A, silicon carbide power Schottky diode",[125,128,132,136,140,144,147,149,153,157,160,163],{"pn_display":126,"pn_norm":126,"summary":127},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":129,"pn_norm":130,"summary":131},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. 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