[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC12065Y":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":77},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},5026,"STPSC12065-Y","STPSC12065Y",null,"active","Automotive 650 V, 12 A, silicon carbide power Schottky diode",[12,15,18],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","12 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-STPSC12065Y.pdf","Datasheet - STPSC12065-Y - Automotive 650 V, 12 A, silicon carbide power Schottky diode",15,483857,"datasheet",9,"\u002Fthumbs\u002F9e\u002F81\u002F9e81876372f98ed45e1337a4deba11ae6b40515d56a105dab5c9cb9400b388a8.jpg",[42],{"alias_norm":43,"kind":44},"STPSC12065","base",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[53,55,59,63,66,70,72,74],{"pn_display":43,"pn_norm":43,"package":8,"summary":54},"650 V, 12 A power Schottky silicon carbide diode",{"pn_display":56,"pn_norm":57,"package":8,"summary":58},"STPSC12C065D-L","STPSC12C065DL","650 V power Schottky silicon carbide diode",{"pn_display":60,"pn_norm":61,"package":8,"summary":62},"STPSC12C065-Y","STPSC12C065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":64,"pn_norm":64,"package":8,"summary":65},"STPSC12G065","650 V, 12 A high surge silicon carbide power Schottky diode",{"pn_display":67,"pn_norm":68,"package":8,"summary":69},"STPSC12G065-Y","STPSC12G065Y","Automotive 650 V, 12 A high surge silicon carbide power Schottky diode",{"pn_display":71,"pn_norm":71,"package":8,"summary":58},"STPSC12H065",{"pn_display":73,"pn_norm":73,"package":8,"summary":58},"STPSC12H065C",{"pn_display":75,"pn_norm":76,"package":8,"summary":62},"STPSC12H065-Y","STPSC12H065Y",[78,81,84,87,91,94,98,102,106,110,113,115],{"pn_display":79,"pn_norm":79,"summary":80},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":82,"pn_norm":82,"summary":83},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":85,"pn_norm":85,"summary":86},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":88,"pn_norm":89,"summary":90},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":92,"pn_norm":92,"summary":93},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":95,"pn_norm":96,"summary":97},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":99,"pn_norm":100,"summary":101},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":103,"pn_norm":104,"summary":105},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":107,"pn_norm":108,"summary":109},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":111,"pn_norm":111,"summary":112},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":114,"pn_norm":114,"summary":112},"GANSPIN612",{"pn_display":116,"pn_norm":117,"summary":118},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]