[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H12G2YTR":3},{"part":4,"mfr":29,"docs":35,"aliases":44,"alts":50,"breadcrumbs":51,"related":57,"more_from_mfr":62},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":24,"pins":8,"updated_at":25,"category_name":26,"category_name_en":27,"category_path":28},5024,"STPSC10H12G2Y-TR","STPSC10H12G2YTR",null,"D2PAK","active","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",[13,16,19,22],[14,15],"工作温度","-40 ~ 175 °C",[17,18],"VDS","1200 V",[20,21],"ID","10 A",[23,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":30,"name_en":31,"name_cn":32,"website":33,"is_domestic":34},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[36],{"id":5,"filename":37,"title":38,"pages":39,"size_bytes":40,"lang":8,"doc_version":8,"published_at":8,"role":41,"outline_count":42,"thumb":43},"ST-STPSC10H12G2YTR.pdf","Datasheet - STPSC10H12G2Y-TR - Automotive 1200 V, 10 A, silicon carbide power Schottky diode",11,381335,"datasheet",7,"\u002Fthumbs\u002F47\u002Fd6\u002F47d6d1bdfa0c1f3d54ce7f21508149f33bb56b425ed5ca6f05219e4f3ff1fe1f.jpg",[45,48],{"alias_norm":46,"kind":47},"STPSC10H12G2","base",{"alias_norm":49,"kind":47},"STPSC10H12G2Y",[],[52,56],{"name":53,"name_en":54,"path":55},"分立器件","Discretes","discrete",{"name":26,"name_en":27,"path":28},[58],{"pn_display":59,"pn_norm":60,"package":9,"summary":61},"STPSC10H12G2-TR","STPSC10H12G2TR","1200 V, 10 A, silicon carbide power Schottky diode",[63,66,70,74,77,79,83,87,90,93,95,98],{"pn_display":64,"pn_norm":64,"summary":65},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":67,"pn_norm":68,"summary":69},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":71,"pn_norm":72,"summary":73},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":75,"pn_norm":75,"summary":76},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":78,"pn_norm":78,"summary":76},"GANSPIN612",{"pn_display":80,"pn_norm":81,"summary":82},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":84,"pn_norm":85,"summary":86},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":88,"pn_norm":88,"summary":89},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":91,"pn_norm":91,"summary":92},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":94,"pn_norm":94,"summary":89},"MASTERGAN4L",{"pn_display":96,"pn_norm":96,"summary":97},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":99,"pn_norm":100,"summary":101},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]