[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H12G2TR":3},{"part":4,"mfr":29,"docs":35,"aliases":44,"alts":48,"breadcrumbs":49,"related":55,"more_from_mfr":74},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":24,"pins":8,"updated_at":25,"category_name":26,"category_name_en":27,"category_path":28},5023,"STPSC10H12G2-TR","STPSC10H12G2TR",null,"D2PAK","active","1200 V, 10 A, silicon carbide power Schottky diode",[13,16,19,22],[14,15],"工作温度","-40 ~ 175 °C",[17,18],"VDS","1200 V",[20,21],"ID","10 A",[23,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":30,"name_en":31,"name_cn":32,"website":33,"is_domestic":34},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[36],{"id":5,"filename":37,"title":38,"pages":39,"size_bytes":40,"lang":8,"doc_version":8,"published_at":8,"role":41,"outline_count":42,"thumb":43},"ST-STPSC10H12G2TR.pdf","Datasheet - STPSC10H12G2-TR - 1200 V, 10 A, silicon carbide power Schottky diode",11,377963,"datasheet",7,"\u002Fthumbs\u002F87\u002F4f\u002F874f7bf60f03d0b7f41ca4b43dc03431532d69249824a305cd533f57e775ab9f.jpg",[45],{"alias_norm":46,"kind":47},"STPSC10H12G2","base",[],[50,54],{"name":51,"name_en":52,"path":53},"分立器件","Discretes","discrete",{"name":26,"name_en":27,"path":28},[56,60,63,66,70],{"pn_display":57,"pn_norm":57,"package":58,"summary":59},"STPSC10H12","DPAK","1200 V power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":62,"package":58,"summary":11},"STPSC10H12B2-TR","STPSC10H12B2TR",{"pn_display":64,"pn_norm":64,"package":65,"summary":59},"STPSC10H12C","TO-247",{"pn_display":67,"pn_norm":68,"package":9,"summary":69},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":71,"pn_norm":72,"package":8,"summary":73},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",[75,78,81,84,87,90,93,95,97,100,102,105],{"pn_display":76,"pn_norm":76,"summary":77},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":79,"pn_norm":79,"summary":80},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":82,"pn_norm":82,"summary":83},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":85,"pn_norm":85,"summary":86},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":88,"pn_norm":88,"summary":89},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":91,"pn_norm":91,"summary":92},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":94,"pn_norm":94,"summary":92},"STDRIVEG211",{"pn_display":96,"pn_norm":96,"summary":92},"STDRIVEG212",{"pn_display":98,"pn_norm":98,"summary":99},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":101,"pn_norm":101,"summary":99},"STDRIVEG600W",{"pn_display":103,"pn_norm":103,"summary":104},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":106,"pn_norm":106,"summary":104},"STDRIVEG611"]