[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H12C":3},{"part":4,"mfr":22,"docs":28,"aliases":36,"alts":43,"breadcrumbs":44,"related":50,"more_from_mfr":106},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},5022,"STPSC10H12C",null,"TO-247","active","1200 V power Schottky silicon carbide diode",[12,15],[13,14],"工作温度","-40 ~ 175 °C",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":24,"name_cn":25,"website":26,"is_domestic":27},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[29],{"id":5,"filename":30,"title":10,"pages":31,"size_bytes":32,"lang":7,"doc_version":7,"published_at":7,"role":33,"outline_count":34,"thumb":35},"ST-STPSC10H12C.pdf",10,436467,"datasheet",0,"\u002Fthumbs\u002Fb5\u002Fb3\u002Fb5b3cc48f31b17d3f6455f49646310dff413aad96d181c3486b59385103c8fca.jpg",[37,40],{"alias_norm":38,"kind":39},"STPSC10H12","base",{"alias_norm":41,"kind":42},"STPSC10H12CWL","order",[],[45,49],{"name":46,"name_en":47,"path":48},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[51,54,58,62,66,69,73,76,79,81,83,86,87,91,95,99,103],{"pn_display":52,"pn_norm":52,"package":7,"summary":53},"STPSC10065","650 V, 10 A low VF power Schottky silicon carbide diode",{"pn_display":55,"pn_norm":55,"package":56,"summary":57},"STPSC10065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":59,"pn_norm":60,"package":7,"summary":61},"STPSC10065-Y","STPSC10065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":63,"pn_norm":64,"package":65,"summary":61},"STPSC10C065-Y","STPSC10C065Y","I2PAK",{"pn_display":67,"pn_norm":67,"package":7,"summary":68},"STPSC10G065","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":70,"pn_norm":71,"package":7,"summary":72},"STPSC10G065-Y","STPSC10G065Y","Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":74,"pn_norm":74,"package":75,"summary":68},"STPSC10H065","DPAK",{"pn_display":77,"pn_norm":78,"package":7,"summary":61},"STPSC10H065BY-TR","STPSC10H065BYTR",{"pn_display":80,"pn_norm":80,"package":56,"summary":57},"STPSC10H065DLF",{"pn_display":82,"pn_norm":82,"package":7,"summary":68},"STPSC10H065G2",{"pn_display":84,"pn_norm":85,"package":7,"summary":61},"STPSC10H065-Y","STPSC10H065Y",{"pn_display":38,"pn_norm":38,"package":75,"summary":10},{"pn_display":88,"pn_norm":89,"package":75,"summary":90},"STPSC10H12B2-TR","STPSC10H12B2TR","1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":92,"pn_norm":93,"package":94,"summary":90},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":96,"pn_norm":97,"package":94,"summary":98},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":100,"pn_norm":101,"package":7,"summary":102},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",{"pn_display":104,"pn_norm":104,"package":7,"summary":105},"STPSC10TH13TI","Dual 650 V power Schottky silicon carbide diode in series",[107,110,114,118,122,126,129,131,135,139,142,145],{"pn_display":108,"pn_norm":108,"summary":109},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":111,"pn_norm":112,"summary":113},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":115,"pn_norm":116,"summary":117},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":119,"pn_norm":120,"summary":121},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":123,"pn_norm":124,"summary":125},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":127,"pn_norm":127,"summary":128},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":130,"pn_norm":130,"summary":128},"GANSPIN612",{"pn_display":132,"pn_norm":133,"summary":134},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":136,"pn_norm":137,"summary":138},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":140,"pn_norm":140,"summary":141},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":143,"pn_norm":143,"summary":144},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":146,"pn_norm":146,"summary":141},"MASTERGAN4L"]