[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H12B2TR":3},{"part":4,"mfr":29,"docs":35,"aliases":44,"alts":48,"breadcrumbs":49,"related":55,"more_from_mfr":74},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":24,"pins":8,"updated_at":25,"category_name":26,"category_name_en":27,"category_path":28},5021,"STPSC10H12B2-TR","STPSC10H12B2TR",null,"DPAK","active","1200 V, 10 A, silicon carbide power Schottky diode",[13,16,19,22],[14,15],"工作温度","-40 ~ 175 °C",[17,18],"VDS","1200 V",[20,21],"ID","10 A",[23,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":30,"name_en":31,"name_cn":32,"website":33,"is_domestic":34},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[36],{"id":5,"filename":37,"title":38,"pages":39,"size_bytes":40,"lang":8,"doc_version":8,"published_at":8,"role":41,"outline_count":42,"thumb":43},"ST-STPSC10H12B2TR.pdf","Datasheet - STPSC10H12B2-TR - 1200 V, 10 A, silicon carbide power Schottky diode",11,223425,"datasheet",7,"\u002Fthumbs\u002F62\u002F57\u002F62579d834258cb60e649c8d3392b55bea531bbd47e1cd184a0d97c552193c2e6.jpg",[45],{"alias_norm":46,"kind":47},"STPSC10H12B2","base",[],[50,54],{"name":51,"name_en":52,"path":53},"分立器件","Discretes","discrete",{"name":26,"name_en":27,"path":28},[56,59,62,66,70],{"pn_display":57,"pn_norm":57,"package":9,"summary":58},"STPSC10H12","1200 V power Schottky silicon carbide diode",{"pn_display":60,"pn_norm":60,"package":61,"summary":58},"STPSC10H12C","TO-247",{"pn_display":63,"pn_norm":64,"package":65,"summary":11},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":67,"pn_norm":68,"package":65,"summary":69},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":71,"pn_norm":72,"package":8,"summary":73},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",[75,78,82,86,89,91,95,99,102,105,107,110],{"pn_display":76,"pn_norm":76,"summary":77},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":79,"pn_norm":80,"summary":81},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":83,"pn_norm":84,"summary":85},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":87,"pn_norm":87,"summary":88},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":90,"pn_norm":90,"summary":88},"GANSPIN612",{"pn_display":92,"pn_norm":93,"summary":94},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":96,"pn_norm":97,"summary":98},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":100,"pn_norm":100,"summary":101},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":103,"pn_norm":103,"summary":104},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":106,"pn_norm":106,"summary":101},"MASTERGAN4L",{"pn_display":108,"pn_norm":108,"summary":109},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":111,"pn_norm":112,"summary":113},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]