[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H065Y":3},{"part":4,"mfr":20,"docs":26,"aliases":34,"alts":38,"breadcrumbs":39,"related":45,"more_from_mfr":80},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":15,"pins":8,"updated_at":16,"category_name":17,"category_name_en":18,"category_path":19},5014,"STPSC10H065-Y","STPSC10H065Y",null,"active","Automotive 650 V power Schottky silicon carbide diode",[12],[13,14],"工作温度","-40 ~ 175 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":21,"name_en":22,"name_cn":23,"website":24,"is_domestic":25},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[27],{"id":5,"filename":28,"title":10,"pages":29,"size_bytes":30,"lang":8,"doc_version":8,"published_at":8,"role":31,"outline_count":32,"thumb":33},"ST-STPSC10H065Y.pdf",11,567622,"datasheet",0,"\u002Fthumbs\u002F61\u002F2a\u002F612afa4ffde0db6d067b8e19060cab6027f5e5efc5ca5ea2891904ad87f5f14c.jpg",[35],{"alias_norm":36,"kind":37},"STPSC10H065","base",[],[40,44],{"name":41,"name_en":42,"path":43},"分立器件","Discretes","discrete",{"name":17,"name_en":18,"path":19},[46,49,52,56,58,61,65,68,72,76],{"pn_display":36,"pn_norm":36,"package":47,"summary":48},"DPAK","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":50,"pn_norm":51,"package":8,"summary":10},"STPSC10H065BY-TR","STPSC10H065BYTR",{"pn_display":53,"pn_norm":53,"package":54,"summary":55},"STPSC10H065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":57,"pn_norm":57,"package":8,"summary":48},"STPSC10H065G2",{"pn_display":59,"pn_norm":59,"package":47,"summary":60},"STPSC10H12","1200 V power Schottky silicon carbide diode",{"pn_display":62,"pn_norm":63,"package":47,"summary":64},"STPSC10H12B2-TR","STPSC10H12B2TR","1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":66,"pn_norm":66,"package":67,"summary":60},"STPSC10H12C","TO-247",{"pn_display":69,"pn_norm":70,"package":71,"summary":64},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":73,"pn_norm":74,"package":71,"summary":75},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":77,"pn_norm":78,"package":8,"summary":79},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",[81,84,87,90,92,94,97,99,103,106,110,113],{"pn_display":82,"pn_norm":82,"summary":83},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":85,"pn_norm":85,"summary":86},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":88,"pn_norm":88,"summary":89},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":91,"pn_norm":91,"summary":89},"STDRIVEG211",{"pn_display":93,"pn_norm":93,"summary":89},"STDRIVEG212",{"pn_display":95,"pn_norm":95,"summary":96},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":98,"pn_norm":98,"summary":96},"STDRIVEG611",{"pn_display":100,"pn_norm":101,"summary":102},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":104,"pn_norm":104,"summary":105},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":107,"pn_norm":108,"summary":109},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":111,"pn_norm":111,"summary":112},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections",{"pn_display":114,"pn_norm":114,"summary":115},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors"]