[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H065G2":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":63},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5018,"STPSC10H065G2",null,"active","650 V, 10 A high surge silicon carbide power Schottky diode",[11,14,17],[12,13],"工作温度","-40 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","10 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC10H065G2.pdf","Datasheet - STPSC10H065G2 - 650 V, 10 A high surge silicon carbide power Schottky diode",11,386810,"datasheet",14,"\u002Fthumbs\u002F05\u002Fab\u002F05ab46da2c2b067194b8ad269c2218148f35b99cd7abeb830b32452531855ac9.jpg",[],[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[49,52,56,60],{"pn_display":50,"pn_norm":50,"package":51,"summary":9},"STPSC10H065","DPAK",{"pn_display":53,"pn_norm":54,"package":7,"summary":55},"STPSC10H065BY-TR","STPSC10H065BYTR","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":57,"pn_norm":57,"package":58,"summary":59},"STPSC10H065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":62,"package":7,"summary":55},"STPSC10H065-Y","STPSC10H065Y",[64,67,71,75,79,83,86,88,92,96,99,102],{"pn_display":65,"pn_norm":65,"summary":66},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":68,"pn_norm":69,"summary":70},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":72,"pn_norm":73,"summary":74},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":76,"pn_norm":77,"summary":78},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":80,"pn_norm":81,"summary":82},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":84,"pn_norm":84,"summary":85},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":87,"pn_norm":87,"summary":85},"GANSPIN612",{"pn_display":89,"pn_norm":90,"summary":91},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":93,"pn_norm":94,"summary":95},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":97,"pn_norm":97,"summary":98},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":100,"pn_norm":100,"summary":101},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":103,"pn_norm":103,"summary":98},"MASTERGAN4L"]