[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H065DLF":3},{"part":4,"mfr":28,"docs":34,"aliases":43,"alts":51,"breadcrumbs":52,"related":58,"more_from_mfr":71},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5017,"STPSC10H065DLF",null,"POWERFLAT8X8","active","650 V, 10 A power Schottky silicon carbide diode",[12,15,18,21],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","10 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":41,"thumb":42},"ST-STPSC10H065DLF.pdf","Datasheet -  STPSC10H065DLF - 650 V, 10 A power Schottky silicon carbide diode",12,390249,"datasheet",7,"\u002Fthumbs\u002Ffa\u002F37\u002Ffa37c2978c5b0fb4331d4c66cd2a958c3b5ab8d3c2bf9491674f7167dda8edd3.jpg",[44,47,49],{"alias_norm":45,"kind":46},"STPSC10H065","base",{"alias_norm":48,"kind":46},"STPSC10H065D",{"alias_norm":50,"kind":46},"STPSC10H065DL",[],[53,57],{"name":54,"name_en":55,"path":56},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[59,62,66,68],{"pn_display":45,"pn_norm":45,"package":60,"summary":61},"DPAK","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":63,"pn_norm":64,"package":7,"summary":65},"STPSC10H065BY-TR","STPSC10H065BYTR","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":67,"pn_norm":67,"package":7,"summary":61},"STPSC10H065G2",{"pn_display":69,"pn_norm":70,"package":7,"summary":65},"STPSC10H065-Y","STPSC10H065Y",[72,75,78,81,84,87,90,92,94,97,99,102],{"pn_display":73,"pn_norm":73,"summary":74},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":76,"pn_norm":76,"summary":77},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":79,"pn_norm":79,"summary":80},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":82,"pn_norm":82,"summary":83},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":85,"pn_norm":85,"summary":86},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":88,"pn_norm":88,"summary":89},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":91,"pn_norm":91,"summary":89},"STDRIVEG211",{"pn_display":93,"pn_norm":93,"summary":89},"STDRIVEG212",{"pn_display":95,"pn_norm":95,"summary":96},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":98,"pn_norm":98,"summary":96},"STDRIVEG600W",{"pn_display":100,"pn_norm":100,"summary":101},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":103,"pn_norm":103,"summary":101},"STDRIVEG611"]