[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10G065Y":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":55},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},5012,"STPSC10G065-Y","STPSC10G065Y",null,"active","Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",[12,15,18],[13,14],"工作温度","-55 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","10 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-STPSC10G065Y.pdf","Datasheet - STPSC10G065-Y - Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",10,538108,"datasheet",12,"\u002Fthumbs\u002Fa9\u002F17\u002Fa917f9265d532577d12c00ddb8715ba0c512e04a9bca8b600875737cce44cf3a.jpg",[42],{"alias_norm":43,"kind":44},"STPSC10G065","base",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[53],{"pn_display":43,"pn_norm":43,"package":8,"summary":54},"650 V, 10 A high surge silicon carbide power Schottky diode",[56,59,63,67,70,72,76,80,83,86,88,91],{"pn_display":57,"pn_norm":57,"summary":58},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":60,"pn_norm":61,"summary":62},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":64,"pn_norm":65,"summary":66},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":68,"pn_norm":68,"summary":69},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":71,"pn_norm":71,"summary":69},"GANSPIN612",{"pn_display":73,"pn_norm":74,"summary":75},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":77,"pn_norm":78,"summary":79},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":81,"pn_norm":81,"summary":82},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":84,"pn_norm":84,"summary":85},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":87,"pn_norm":87,"summary":82},"MASTERGAN4L",{"pn_display":89,"pn_norm":89,"summary":90},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":92,"pn_norm":93,"summary":94},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]