[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10065":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":122},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5009,"STPSC10065",null,"active","650 V, 10 A low VF power Schottky silicon carbide diode",[11,14,17],[12,13],"工作温度","-40 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","10 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC10065.pdf","Datasheet - STPSC10065 - 650 V, 10 A low VF power Schottky silicon carbide diode",13,398902,"datasheet",8,"\u002Fthumbs\u002Fa1\u002F00\u002Fa1007db7462231532a6dcccde61645c75ba32bcc79ce24b7ee3a2ce730108374.jpg",[41,44],{"alias_norm":42,"kind":43},"STPSC10065D","order",{"alias_norm":45,"kind":43},"STPSC10065G2",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[54,58,62,66,69,73,76,79,81,83,86,89,93,96,100,104,108,111,114,118],{"pn_display":55,"pn_norm":55,"package":56,"summary":57},"STPSC10065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":59,"pn_norm":60,"package":7,"summary":61},"STPSC10065-Y","STPSC10065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":63,"pn_norm":64,"package":65,"summary":61},"STPSC10C065-Y","STPSC10C065Y","I2PAK",{"pn_display":67,"pn_norm":67,"package":7,"summary":68},"STPSC10G065","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":70,"pn_norm":71,"package":7,"summary":72},"STPSC10G065-Y","STPSC10G065Y","Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":74,"pn_norm":74,"package":75,"summary":68},"STPSC10H065","DPAK",{"pn_display":77,"pn_norm":78,"package":7,"summary":61},"STPSC10H065BY-TR","STPSC10H065BYTR",{"pn_display":80,"pn_norm":80,"package":56,"summary":57},"STPSC10H065DLF",{"pn_display":82,"pn_norm":82,"package":7,"summary":68},"STPSC10H065G2",{"pn_display":84,"pn_norm":85,"package":7,"summary":61},"STPSC10H065-Y","STPSC10H065Y",{"pn_display":87,"pn_norm":87,"package":75,"summary":88},"STPSC10H12","1200 V power Schottky silicon carbide diode",{"pn_display":90,"pn_norm":91,"package":75,"summary":92},"STPSC10H12B2-TR","STPSC10H12B2TR","1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":94,"pn_norm":94,"package":95,"summary":88},"STPSC10H12C","TO-247",{"pn_display":97,"pn_norm":98,"package":99,"summary":92},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":101,"pn_norm":102,"package":99,"summary":103},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":105,"pn_norm":106,"package":7,"summary":107},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",{"pn_display":109,"pn_norm":109,"package":7,"summary":110},"STPSC10TH13TI","Dual 650 V power Schottky silicon carbide diode in series",{"pn_display":112,"pn_norm":112,"package":7,"summary":113},"STPSC12065","650 V, 12 A power Schottky silicon carbide diode",{"pn_display":115,"pn_norm":116,"package":7,"summary":117},"STPSC12065-Y","STPSC12065Y","Automotive 650 V, 12 A, silicon carbide power Schottky diode",{"pn_display":119,"pn_norm":120,"package":7,"summary":121},"STPSC12C065D-L","STPSC12C065DL","650 V power Schottky silicon carbide diode",[123,126,129,132,136,140,144,148,151,153,157,161],{"pn_display":124,"pn_norm":124,"summary":125},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":127,"pn_norm":127,"summary":128},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":130,"pn_norm":130,"summary":131},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":133,"pn_norm":134,"summary":135},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":137,"pn_norm":138,"summary":139},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":141,"pn_norm":142,"summary":143},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":145,"pn_norm":146,"summary":147},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":149,"pn_norm":149,"summary":150},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":152,"pn_norm":152,"summary":150},"GANSPIN612",{"pn_display":154,"pn_norm":155,"summary":156},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":158,"pn_norm":159,"summary":160},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":162,"pn_norm":162,"summary":163},"MASTERGAN1","High power density 600V Half bridge driver with two enhancement mode GaN HEMT"]