[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCTWA90N65G2V":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":56},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2621,"SCTWA90N65G2V",null,"active","Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247 long leads package",[11,14,17],[12,13],"VDS","650 V",[15,16],"ID","119 A",[18,19],"RDS(on)","18 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCTWA90N65G2V.pdf","Datasheet - SCTWA90N65G2V - Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247 long leads package",12,500951,"datasheet",7,"\u002Fthumbs\u002F6a\u002Fc0\u002F6ac057de9f2f6db5e1a8093959d3e521d92b5905a0d320c3b47c3681c4ac98dd.jpg",[41],{"alias_norm":42,"kind":43},"SCTWA90N65G2","base",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[52],{"pn_display":53,"pn_norm":54,"package":7,"summary":55},"SCTWA90N65G2V-4","SCTWA90N65G2V4","Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package",[57,60,63,66,70,73,77,81,85,89,92,94],{"pn_display":58,"pn_norm":58,"summary":59},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":61,"pn_norm":61,"summary":62},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":64,"pn_norm":64,"summary":65},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":67,"pn_norm":68,"summary":69},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":71,"pn_norm":71,"summary":72},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":74,"pn_norm":75,"summary":76},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":78,"pn_norm":79,"summary":80},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":82,"pn_norm":83,"summary":84},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":86,"pn_norm":87,"summary":88},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":90,"pn_norm":90,"summary":91},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":93,"pn_norm":93,"summary":91},"GANSPIN612",{"pn_display":95,"pn_norm":96,"summary":97},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]