[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCTH60N120G27":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":42,"breadcrumbs":43,"related":49,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2583,"SCTH60N120G2-7","SCTH60N120G27",null,"active","Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package",[12,15,18],[13,14],"VDS","1200 V",[16,17],"ID","60 A",[19,20],"RDS(on)","35 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCTH60N120G27.pdf","Datasheet - SCTH60N120G2-7 - Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package",14,356929,"datasheet",10,"\u002Fthumbs\u002F41\u002Fdd\u002F41dd3960874a4087c14dc4cae8f43b58ecc73e6a06ea071103bc45cea0389e6e.jpg",[],[],[44,48],{"name":45,"name_en":46,"path":47},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[50],{"pn_display":51,"pn_norm":52,"package":8,"summary":53},"SCTH60N120G2-7AG","SCTH60N120G27AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package",[55,58,62,66,69,71,75,79,82,85,87,90],{"pn_display":56,"pn_norm":56,"summary":57},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":59,"pn_norm":60,"summary":61},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":63,"pn_norm":64,"summary":65},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":67,"pn_norm":67,"summary":68},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":70,"pn_norm":70,"summary":68},"GANSPIN612",{"pn_display":72,"pn_norm":73,"summary":74},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":76,"pn_norm":77,"summary":78},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":80,"pn_norm":80,"summary":81},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":83,"pn_norm":83,"summary":84},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":86,"pn_norm":86,"summary":81},"MASTERGAN4L",{"pn_display":88,"pn_norm":88,"summary":89},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":91,"pn_norm":92,"summary":93},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]