[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCTH35N65G2V7AG":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":58},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2580,"SCTH35N65G2V-7AG","SCTH35N65G2V7AG",null,"active","Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package",[12,15,18],[13,14],"VDS","650 V",[16,17],"ID","45 A",[19,20],"RDS(on)","55 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCTH35N65G2V7AG.pdf","Datasheet - SCTH35N65G2V-7AG - Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package",15,384296,"datasheet",11,"\u002Fthumbs\u002Fbe\u002F6b\u002Fbe6b73ddbcc1ec7f9bc3c8763fda2fd8f888432623ad6343a40eff5d3d8b21ff.jpg",[42,45],{"alias_norm":43,"kind":44},"SCTH35N65G2V7","base",{"alias_norm":46,"kind":44},"SCTH35N65G2V7A",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[55],{"pn_display":56,"pn_norm":43,"package":8,"summary":57},"SCTH35N65G2V-7","Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package",[59,62,65,68,71,74,77,79,81,84,86,89],{"pn_display":60,"pn_norm":60,"summary":61},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":63,"pn_norm":63,"summary":64},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":66,"pn_norm":66,"summary":67},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":69,"pn_norm":69,"summary":70},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":72,"pn_norm":72,"summary":73},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":75,"pn_norm":75,"summary":76},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":78,"pn_norm":78,"summary":76},"STDRIVEG211",{"pn_display":80,"pn_norm":80,"summary":76},"STDRIVEG212",{"pn_display":82,"pn_norm":82,"summary":83},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":85,"pn_norm":85,"summary":83},"STDRIVEG600W",{"pn_display":87,"pn_norm":87,"summary":88},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":90,"pn_norm":90,"summary":88},"STDRIVEG611"]