[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT50N120":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":49},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2576,"SCT50N120",null,"active","Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 package",[11,14,17],[12,13],"VDS","1200 V",[15,16],"ID","65 A",[18,19],"RDS(on)","52 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT50N120.pdf","Datasheet - SCT50N120 - Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 package",11,473148,"datasheet",7,"\u002Fthumbs\u002Fdc\u002Fb7\u002Fdcb758535c7a46833fee7217a7ed0c99a82f7d968944589a371f546c7d3fe342.jpg",[],[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[],[50,53,56,59,63,66,70,74,78,82,86,89],{"pn_display":51,"pn_norm":51,"summary":52},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":54,"pn_norm":54,"summary":55},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":57,"pn_norm":57,"summary":58},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":60,"pn_norm":61,"summary":62},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":64,"pn_norm":64,"summary":65},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":67,"pn_norm":68,"summary":69},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":71,"pn_norm":72,"summary":73},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":75,"pn_norm":76,"summary":77},"A2TBH45M65W3-FC","A2TBH45M65W3FC","ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance",{"pn_display":79,"pn_norm":80,"summary":81},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":83,"pn_norm":84,"summary":85},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":87,"pn_norm":87,"summary":88},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":90,"pn_norm":90,"summary":88},"GANSPIN612"]