[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT20N170AG":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":63},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2574,"SCT20N170AG",null,"active","Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an HiP247 package",[11,14,17],[12,13],"VDS","1700 V",[15,16],"ID","43 A",[18,19],"RDS(on)","64 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT20N170AG.pdf","Datasheet - SCT20N170AG - Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an HiP247 package",11,362892,"datasheet",9,"\u002Fthumbs\u002F35\u002F91\u002F35912a19ef166e1eb94c205aebb5d5fd9411be9cb4ab970a22a4dbe7e280fc78.jpg",[41,44],{"alias_norm":42,"kind":43},"SCT20N170","base",{"alias_norm":45,"kind":43},"SCT20N170A",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[54,57,60],{"pn_display":55,"pn_norm":55,"package":7,"summary":56},"SCT20N120","Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package",{"pn_display":58,"pn_norm":58,"package":7,"summary":59},"SCT20N120AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package",{"pn_display":61,"pn_norm":61,"package":7,"summary":62},"SCT20N120H","Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package",[64,67,71,74,76,80,83,86,88,91,95,99],{"pn_display":65,"pn_norm":65,"summary":66},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":68,"pn_norm":69,"summary":70},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":72,"pn_norm":72,"summary":73},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":75,"pn_norm":75,"summary":73},"GANSPIN612",{"pn_display":77,"pn_norm":78,"summary":79},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":81,"pn_norm":81,"summary":82},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":84,"pn_norm":84,"summary":85},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":87,"pn_norm":87,"summary":82},"MASTERGAN4L",{"pn_display":89,"pn_norm":89,"summary":90},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":92,"pn_norm":93,"summary":94},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package",{"pn_display":96,"pn_norm":97,"summary":98},"SCT018H65G3-7","SCT018H65G37","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package",{"pn_display":100,"pn_norm":100,"summary":101},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package"]