[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT10N120":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":58},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2569,"SCT10N120",null,"active","Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an HiP247 package",[11,14,17],[12,13],"VDS","1200 V",[15,16],"ID","12 A",[18,19],"RDS(on)","500 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT10N120.pdf","Datasheet - SCT10N120 - Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an HiP247 package",12,486357,"datasheet",7,"\u002Fthumbs\u002Ff9\u002F2d\u002Ff92d6920f08e5325f1e1874f9c1a9b60ff3c81d7fc861d335130df3c46e131e9.jpg",[],[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[49,52,55],{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"SCT1000N170","Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package",{"pn_display":53,"pn_norm":53,"package":7,"summary":54},"SCT1000N170AG","Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package",{"pn_display":56,"pn_norm":56,"package":7,"summary":57},"SCT10N120AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package -",[59,62,65,68,72,75,79,83,87,91,94,96],{"pn_display":60,"pn_norm":60,"summary":61},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":63,"pn_norm":63,"summary":64},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":66,"pn_norm":66,"summary":67},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":69,"pn_norm":70,"summary":71},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":73,"pn_norm":73,"summary":74},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":76,"pn_norm":77,"summary":78},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":80,"pn_norm":81,"summary":82},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":84,"pn_norm":85,"summary":86},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":88,"pn_norm":89,"summary":90},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":92,"pn_norm":92,"summary":93},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":95,"pn_norm":95,"summary":93},"GANSPIN612",{"pn_display":97,"pn_norm":98,"summary":99},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]