[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT1000N170":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":52},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2567,"SCT1000N170",null,"active","Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package",[11,14,17],[12,13],"VDS","1700 V",[15,16],"ID","7 A",[18,19],"RDS(on)","1 Ω",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT1000N170.pdf","Datasheet - SCT1000N170 - Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package",11,308040,"datasheet",9,"\u002Fthumbs\u002F0c\u002F45\u002F0c4551580a781b59d20c90c0604a184c9b6fb50f35c390264b844395bad566a4.jpg",[],[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[49],{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"SCT1000N170AG","Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package",[53,56,60,64,68,72,75,77,81,85,88,91],{"pn_display":54,"pn_norm":54,"summary":55},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":57,"pn_norm":58,"summary":59},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":61,"pn_norm":62,"summary":63},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":65,"pn_norm":66,"summary":67},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":69,"pn_norm":70,"summary":71},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":73,"pn_norm":73,"summary":74},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":76,"pn_norm":76,"summary":74},"GANSPIN612",{"pn_display":78,"pn_norm":79,"summary":80},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":82,"pn_norm":83,"summary":84},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":86,"pn_norm":86,"summary":87},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":89,"pn_norm":89,"summary":90},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":92,"pn_norm":92,"summary":87},"MASTERGAN4L"]