[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT060W75G34AG":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":55},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2560,"SCT060W75G3-4AG","SCT060W75G34AG",null,"active","Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247-4 package",[12,15,18],[13,14],"VDS","750 V",[16,17],"ID","30 A",[19,20],"RDS(on)","60 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT060W75G34AG.pdf","Datasheet - SCT060W75G3-4AG - Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247-4 package",12,498136,"datasheet",7,"\u002Fthumbs\u002F36\u002F35\u002F3635f639399b526d7102d9e18fa789676bb7c78eaa8d9f1f0814c630439d9702.jpg",[42,45],{"alias_norm":43,"kind":44},"SCT060W75G34","base",{"alias_norm":46,"kind":44},"SCT060W75G34A",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[],[56,59,63,66,68,72,75,78,81,85,88,91],{"pn_display":57,"pn_norm":57,"summary":58},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":60,"pn_norm":61,"summary":62},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":64,"pn_norm":64,"summary":65},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":67,"pn_norm":67,"summary":65},"GANSPIN612",{"pn_display":69,"pn_norm":70,"summary":71},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":73,"pn_norm":73,"summary":74},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":76,"pn_norm":76,"summary":77},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":79,"pn_norm":79,"summary":80},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":82,"pn_norm":83,"summary":84},"SCT018H65G3-7","SCT018H65G37","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package",{"pn_display":86,"pn_norm":86,"summary":87},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":89,"pn_norm":89,"summary":90},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":92,"pn_norm":92,"summary":93},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches"]