[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT055H65G37":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":42,"breadcrumbs":43,"related":49,"more_from_mfr":53},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2554,"SCT055H65G3-7","SCT055H65G37",null,"active","Silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an H²PAK-7 package",[12,15,18],[13,14],"VDS","650 V",[16,17],"ID","30 A",[19,20],"RDS(on)","58 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT055H65G37.pdf","Datasheet - SCT055H65G3-7 - Silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an H²PAK-7 package",14,512549,"datasheet",8,"\u002Fthumbs\u002F1c\u002Fd1\u002F1cd1521e99aaf2ec5ee9307f3f2ffc5dd832d08d2f0250e97256e1ae35f78bc1.jpg",[],[],[44,48],{"name":45,"name_en":46,"path":47},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[50],{"pn_display":51,"pn_norm":51,"package":8,"summary":52},"SCT055H65G3AG","Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an H²PAK-7 package",[54,57,61,65,68,70,74,78,81,84,86,89],{"pn_display":55,"pn_norm":55,"summary":56},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":58,"pn_norm":59,"summary":60},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":62,"pn_norm":63,"summary":64},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":66,"pn_norm":66,"summary":67},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":69,"pn_norm":69,"summary":67},"GANSPIN612",{"pn_display":71,"pn_norm":72,"summary":73},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":75,"pn_norm":76,"summary":77},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":79,"pn_norm":79,"summary":80},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":82,"pn_norm":82,"summary":83},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":85,"pn_norm":85,"summary":80},"MASTERGAN4L",{"pn_display":87,"pn_norm":87,"summary":88},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":90,"pn_norm":91,"summary":92},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]