[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT040W65G34":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":42,"breadcrumbs":43,"related":49,"more_from_mfr":57},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2550,"SCT040W65G3-4","SCT040W65G34",null,"active","Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package",[12,15,18],[13,14],"VDS","650 V",[16,17],"ID","30 A",[19,20],"RDS(on)","45 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT040W65G34.pdf","Datasheet - SCT040W65G3-4 - Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package",12,490413,"datasheet",7,"\u002Fthumbs\u002F9f\u002F9d\u002F9f9ddc203144d937b3f8092bc1e5b1f45aebdd60110f045b473324cf280b26a0.jpg",[],[],[44,48],{"name":45,"name_en":46,"path":47},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[50,54],{"pn_display":51,"pn_norm":52,"package":8,"summary":53},"SCT040W65G3-4AG","SCT040W65G34AG","Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package",{"pn_display":55,"pn_norm":55,"package":8,"summary":56},"SCT040W65G3AG","Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247 package",[58,61,65,69,72,74,78,82,85,88,90,93],{"pn_display":59,"pn_norm":59,"summary":60},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":62,"pn_norm":63,"summary":64},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":66,"pn_norm":67,"summary":68},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":70,"pn_norm":70,"summary":71},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":73,"pn_norm":73,"summary":71},"GANSPIN612",{"pn_display":75,"pn_norm":76,"summary":77},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":79,"pn_norm":80,"summary":81},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":83,"pn_norm":83,"summary":84},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":86,"pn_norm":86,"summary":87},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":89,"pn_norm":89,"summary":84},"MASTERGAN4L",{"pn_display":91,"pn_norm":91,"summary":92},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":94,"pn_norm":95,"summary":96},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]