[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT040H65G3AG":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":61},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2542,"SCT040H65G3AG",null,"active","Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package",[11,14,17],[12,13],"VDS","650 V",[15,16],"ID","30 A",[18,19],"RDS(on)","40 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT040H65G3AG.pdf","Datasheet - SCT040H65G3AG - Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package",14,699582,"datasheet",8,"\u002Fthumbs\u002Fea\u002Fc6\u002Feac6eb7794c441987e6fdf14d8167c18a374b0dcc03334ee6d78a98b050012d9.jpg",[41,44],{"alias_norm":42,"kind":43},"SCT040H65G3","base",{"alias_norm":45,"kind":43},"SCT040H65G3A",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[54,58],{"pn_display":55,"pn_norm":56,"package":7,"summary":57},"SCT040H65G3-7","SCT040H65G37","Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package",{"pn_display":59,"pn_norm":59,"package":7,"summary":60},"SCT040H65G3SAG","Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 straight leads package",[62,65,69,73,77,81,84,86,90,94,97,100],{"pn_display":63,"pn_norm":63,"summary":64},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":66,"pn_norm":67,"summary":68},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":70,"pn_norm":71,"summary":72},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":74,"pn_norm":75,"summary":76},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":78,"pn_norm":79,"summary":80},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":82,"pn_norm":82,"summary":83},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":85,"pn_norm":85,"summary":83},"GANSPIN612",{"pn_display":87,"pn_norm":88,"summary":89},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":91,"pn_norm":92,"summary":93},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":95,"pn_norm":95,"summary":96},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":98,"pn_norm":98,"summary":99},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":101,"pn_norm":101,"summary":96},"MASTERGAN4L"]