[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT040H65G37":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":42,"breadcrumbs":43,"related":49,"more_from_mfr":56},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2541,"SCT040H65G3-7","SCT040H65G37",null,"active","Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package",[12,15,18],[13,14],"VDS","650 V",[16,17],"ID","30 A",[19,20],"RDS(on)","40 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT040H65G37.pdf","Datasheet - SCT040H65G3-7 - Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package",14,686311,"datasheet",8,"\u002Fthumbs\u002F0f\u002F38\u002F0f38626754ef54c712fc3ad84c4f3a0cc7dd8dfe83562b328cd95d6b05459770.jpg",[],[],[44,48],{"name":45,"name_en":46,"path":47},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[50,53],{"pn_display":51,"pn_norm":51,"package":8,"summary":52},"SCT040H65G3AG","Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package",{"pn_display":54,"pn_norm":54,"package":8,"summary":55},"SCT040H65G3SAG","Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 straight leads package",[57,60,63,66,70,74,78,82,85,87,91,95],{"pn_display":58,"pn_norm":58,"summary":59},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":61,"pn_norm":61,"summary":62},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":64,"pn_norm":64,"summary":65},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":67,"pn_norm":68,"summary":69},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":71,"pn_norm":72,"summary":73},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":75,"pn_norm":76,"summary":77},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":79,"pn_norm":80,"summary":81},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":83,"pn_norm":83,"summary":84},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":86,"pn_norm":86,"summary":84},"GANSPIN612",{"pn_display":88,"pn_norm":89,"summary":90},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":92,"pn_norm":93,"summary":94},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":96,"pn_norm":96,"summary":97},"MASTERGAN1","High power density 600V Half bridge driver with two enhancement mode GaN HEMT"]