[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT027W65G34AG":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":55},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2537,"SCT027W65G3-4AG","SCT027W65G34AG",null,"active","Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package",[12,15,18],[13,14],"VDS","650 V",[16,17],"ID","60 A",[19,20],"RDS(on)","29 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT027W65G34AG.pdf","Datasheet -  SCT027W65G3-4AG  - Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package",12,496399,"datasheet",7,"\u002Fthumbs\u002Fc3\u002Fe6\u002Fc3e6b7e371eb6873abea3eea895beae1bf285dbc8a8b409e5d286116f9dfe5ac.jpg",[42,45],{"alias_norm":43,"kind":44},"SCT027W65G34","base",{"alias_norm":46,"kind":44},"SCT027W65G34A",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[],[56,59,63,67,70,72,76,79,82,84,87,91],{"pn_display":57,"pn_norm":57,"summary":58},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":60,"pn_norm":61,"summary":62},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":64,"pn_norm":65,"summary":66},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":68,"pn_norm":68,"summary":69},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":71,"pn_norm":71,"summary":69},"GANSPIN612",{"pn_display":73,"pn_norm":74,"summary":75},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":77,"pn_norm":77,"summary":78},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":80,"pn_norm":80,"summary":81},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":83,"pn_norm":83,"summary":78},"MASTERGAN4L",{"pn_display":85,"pn_norm":85,"summary":86},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":88,"pn_norm":89,"summary":90},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package",{"pn_display":92,"pn_norm":93,"summary":94},"SCT018H65G3-7","SCT018H65G37","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package"]