[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT025HU120G3AG":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2530,"SCT025HU120G3AG",null,"active","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 60 A in an HU3PAK package",[11,14,17],[12,13],"VDS","1200 V",[15,16],"ID","60 A",[18,19],"RDS(on)","27 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT025HU120G3AG.pdf","Datasheet - SCT025HU120G3AG - Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 60 A in an HU3PAK package",14,954682,"datasheet",8,"\u002Fthumbs\u002F82\u002Fce\u002F82ceb0927fd19f6277692fb15f36d5df0154410ef7c567769cd482c83631aafd.jpg",[41,44],{"alias_norm":42,"kind":43},"SCT025HU120G3","base",{"alias_norm":45,"kind":43},"SCT025HU120G3A",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[],[55,58,61,64,67,70,73,75,77,80,82,85],{"pn_display":56,"pn_norm":56,"summary":57},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":59,"pn_norm":59,"summary":60},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":62,"pn_norm":62,"summary":63},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":65,"pn_norm":65,"summary":66},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":68,"pn_norm":68,"summary":69},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":71,"pn_norm":71,"summary":72},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":74,"pn_norm":74,"summary":72},"STDRIVEG211",{"pn_display":76,"pn_norm":76,"summary":72},"STDRIVEG212",{"pn_display":78,"pn_norm":78,"summary":79},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":81,"pn_norm":81,"summary":79},"STDRIVEG600W",{"pn_display":83,"pn_norm":83,"summary":84},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":86,"pn_norm":86,"summary":84},"STDRIVEG611"]