[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT018H65G37":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":42,"breadcrumbs":43,"related":49,"more_from_mfr":53},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},2518,"SCT018H65G3-7","SCT018H65G37",null,"active","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package",[12,15,18],[13,14],"VDS","650 V",[16,17],"ID","55 A",[19,20],"RDS(on)","20 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-SCT018H65G37.pdf","Datasheet - SCT018H65G3-7 - Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package",14,691855,"datasheet",8,"\u002Fthumbs\u002F6d\u002F5d\u002F6d5dbd2286f78a1feb5e831d2eb229bce5f992953e6547c928ee883e67402db5.jpg",[],[],[44,48],{"name":45,"name_en":46,"path":47},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[50],{"pn_display":51,"pn_norm":51,"package":8,"summary":52},"SCT018H65G3AG","Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package",[54,57,61,64,66,70,73,76,79,82,85,88],{"pn_display":55,"pn_norm":55,"summary":56},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":58,"pn_norm":59,"summary":60},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":62,"pn_norm":62,"summary":63},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":65,"pn_norm":65,"summary":63},"GANSPIN612",{"pn_display":67,"pn_norm":68,"summary":69},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":71,"pn_norm":71,"summary":72},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":74,"pn_norm":74,"summary":75},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":77,"pn_norm":77,"summary":78},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":80,"pn_norm":80,"summary":81},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":83,"pn_norm":83,"summary":84},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":86,"pn_norm":86,"summary":87},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":89,"pn_norm":89,"summary":87},"STDRIVEG211"]