[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCT011HU75G3AG":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2509,"SCT011HU75G3AG",null,"active","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",[11,14,17],[12,13],"VDS","750 V",[15,16],"ID","110 A",[18,19],"RDS(on)","11.4 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCT011HU75G3AG.pdf","Datasheet - SCT011HU75G3AG - Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",15,976545,"datasheet",8,"\u002Fthumbs\u002Ff3\u002Fd7\u002Ff3d7c5d1fcde110164eb84ccddc6652712275e9c214a9725593c0630a6cffa4a.jpg",[41,44],{"alias_norm":42,"kind":43},"SCT011HU75G3","base",{"alias_norm":45,"kind":43},"SCT011HU75G3A",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[],[55,58,60,63,66,69,72,75,78,80,82,85],{"pn_display":56,"pn_norm":56,"summary":57},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":59,"pn_norm":59,"summary":57},"GANSPIN612",{"pn_display":61,"pn_norm":61,"summary":62},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":64,"pn_norm":64,"summary":65},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":67,"pn_norm":67,"summary":68},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":70,"pn_norm":70,"summary":71},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":73,"pn_norm":73,"summary":74},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":76,"pn_norm":76,"summary":77},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":79,"pn_norm":79,"summary":77},"STDRIVEG211",{"pn_display":81,"pn_norm":81,"summary":77},"STDRIVEG212",{"pn_display":83,"pn_norm":83,"summary":84},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":86,"pn_norm":86,"summary":84},"STDRIVEG600W"]