[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:A2U8M12W3FC":3},{"part":4,"mfr":20,"docs":26,"aliases":35,"alts":41,"breadcrumbs":42,"related":48,"more_from_mfr":49},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":15,"pins":8,"updated_at":16,"category_name":17,"category_name_en":18,"category_path":19},701,"A2U8M12W3-FC","A2U8M12W3FC",null,"ACEPACK2","active","ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V",[13],[14,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":21,"name_en":22,"name_cn":23,"website":24,"is_domestic":25},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[27],{"id":5,"filename":28,"title":29,"pages":30,"size_bytes":31,"lang":8,"doc_version":8,"published_at":8,"role":32,"outline_count":33,"thumb":34},"ST-A2U8M12W3FC.pdf","Datasheet - A2U8M12W3-FC - ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V",17,946373,"datasheet",14,"\u002Fthumbs\u002Fef\u002F0e\u002Fef0e932303864775777255a4ee4561efac415f9cc30715a49a6b26d909d3875b.jpg",[36,39],{"alias_norm":37,"kind":38},"A2U8M12W3","base",{"alias_norm":40,"kind":38},"A2U8M12W3F",[],[43,47],{"name":44,"name_en":45,"path":46},"分立器件","Discretes","discrete",{"name":17,"name_en":18,"path":19},[],[50,53,56,59,63,66,70,74,78,82,85,87],{"pn_display":51,"pn_norm":51,"summary":52},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":54,"pn_norm":54,"summary":55},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":57,"pn_norm":57,"summary":58},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":60,"pn_norm":61,"summary":62},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":64,"pn_norm":64,"summary":65},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":67,"pn_norm":68,"summary":69},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":71,"pn_norm":72,"summary":73},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":75,"pn_norm":76,"summary":77},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":79,"pn_norm":80,"summary":81},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":83,"pn_norm":83,"summary":84},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":86,"pn_norm":86,"summary":84},"GANSPIN612",{"pn_display":88,"pn_norm":89,"summary":90},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]