[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:A2U12M12W2F2":3},{"part":4,"mfr":23,"docs":29,"aliases":38,"alts":39,"breadcrumbs":40,"related":46,"more_from_mfr":51},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},700,"A2U12M12W2-F2","A2U12M12W2F2",null,"ACEPACK2","active","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",[13,16],[14,15],"RDS(on)","13 mΩ",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":32,"pages":33,"size_bytes":34,"lang":8,"doc_version":8,"published_at":8,"role":35,"outline_count":36,"thumb":37},"ST-A2U12M12W2F2.pdf","Datasheet - A2U12M12W2-F2 - ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",15,482682,"datasheet",12,"\u002Fthumbs\u002Fcd\u002F43\u002Fcd43f4277a3dc291f2daacff1e1032ee01bf5101227ae14717f1d0be064877e0.jpg",[],[],[41,45],{"name":42,"name_en":43,"path":44},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[47],{"pn_display":48,"pn_norm":49,"package":9,"summary":50},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",[52,55,59,62,64,68,72,75,78,80,83],{"pn_display":53,"pn_norm":53,"summary":54},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":56,"pn_norm":57,"summary":58},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":60,"pn_norm":60,"summary":61},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":63,"pn_norm":63,"summary":61},"GANSPIN612",{"pn_display":65,"pn_norm":66,"summary":67},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":69,"pn_norm":70,"summary":71},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":73,"pn_norm":73,"summary":74},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":76,"pn_norm":76,"summary":77},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":79,"pn_norm":79,"summary":74},"MASTERGAN4L",{"pn_display":81,"pn_norm":81,"summary":82},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":84,"pn_norm":85,"summary":86},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]