[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:A2F20M65W3FC":3},{"part":4,"mfr":23,"docs":29,"aliases":38,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":52},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},695,"A2F20M65W3-FC","A2F20M65W3FC",null,"ACEPACK2","active","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",[13,16],[14,15],"RDS(on)","23 mΩ",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":32,"pages":33,"size_bytes":34,"lang":8,"doc_version":8,"published_at":8,"role":35,"outline_count":36,"thumb":37},"ST-A2F20M65W3FC.pdf","Datasheet - A2F20M65W3-FC - ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",14,818205,"datasheet",11,"\u002Fthumbs\u002F4d\u002F8e\u002F4d8ed6ac1f81c39fc1f7f4522b138f50fc769d8f32198d5cf07350d88841d4f0.jpg",[39,42],{"alias_norm":40,"kind":41},"A2F20M65W3","base",{"alias_norm":43,"kind":41},"A2F20M65W3F",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[],[53,56,60,64,67,69,73,77,80,83,85,88],{"pn_display":54,"pn_norm":54,"summary":55},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":57,"pn_norm":58,"summary":59},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":61,"pn_norm":62,"summary":63},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":65,"pn_norm":65,"summary":66},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":68,"pn_norm":68,"summary":66},"GANSPIN612",{"pn_display":70,"pn_norm":71,"summary":72},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":74,"pn_norm":75,"summary":76},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":78,"pn_norm":78,"summary":79},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":81,"pn_norm":81,"summary":82},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":84,"pn_norm":84,"summary":79},"MASTERGAN4L",{"pn_display":86,"pn_norm":86,"summary":87},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":89,"pn_norm":90,"summary":91},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]