[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:A1F25M12W2F1":3},{"part":4,"mfr":23,"docs":29,"aliases":38,"alts":39,"breadcrumbs":40,"related":46,"more_from_mfr":47},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},679,"A1F25M12W2-F1","A1F25M12W2F1",null,"ACEPACK1","active","ACEPACK 1 power module, fourpack topology, 1200 V, 25 mΩ typ. SiC MOSFET gen.2 with NTC",[13,16],[14,15],"RDS(on)","25 mΩ",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":32,"pages":33,"size_bytes":34,"lang":8,"doc_version":8,"published_at":8,"role":35,"outline_count":36,"thumb":37},"ST-A1F25M12W2F1.pdf","Datasheet - A1F25M12W2-F1 - ACEPACK 1 power module, fourpack topology, 1200 V, 25 mΩ typ. SiC MOSFET gen.2 with NTC",16,559107,"datasheet",14,"\u002Fthumbs\u002F9b\u002Fa7\u002F9ba7ec2ecf5fb12f72762aaeb5936319d4fed4a5fe984a86a494a783b5f75815.jpg",[],[],[41,45],{"name":42,"name_en":43,"path":44},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[],[48,51,54,57,61,65,69,73,76,78,82,86],{"pn_display":49,"pn_norm":49,"summary":50},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":52,"pn_norm":52,"summary":53},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":55,"pn_norm":55,"summary":56},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":58,"pn_norm":59,"summary":60},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":62,"pn_norm":63,"summary":64},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":66,"pn_norm":67,"summary":68},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":70,"pn_norm":71,"summary":72},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":74,"pn_norm":74,"summary":75},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":77,"pn_norm":77,"summary":75},"GANSPIN612",{"pn_display":79,"pn_norm":80,"summary":81},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":83,"pn_norm":84,"summary":85},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":87,"pn_norm":87,"summary":88},"MASTERGAN1","High power density 600V Half bridge driver with two enhancement mode GaN HEMT"]