[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:UF4SC120023K4S":3},{"part":4,"mfr":22,"docs":27,"aliases":36,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":52},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},11055,"UF4SC120023K4S",null,"TO247","active","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 23 mohm",[12,15],[13,14],"RDS(on)","23 mΩ",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":23,"name_cn":24,"website":25,"is_domestic":26},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[28],{"id":5,"filename":29,"title":30,"pages":31,"size_bytes":32,"lang":7,"doc_version":7,"published_at":7,"role":33,"outline_count":34,"thumb":35},"ONSEMI-UF4SC120023K4S.pdf","UF4SC120023K4S - Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 23 mohm",12,545774,"datasheet",0,"\u002Fthumbs\u002Ff8\u002F17\u002Ff8176692b2fd8c903e70bfe88ea769a184b67486166bf8458f49cca48c1974c9.jpg",[37],{"alias_norm":38,"kind":39},"UF4SC120023K4","base",[],[42,46],{"name":43,"name_en":44,"path":45},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[48],{"pn_display":49,"pn_norm":49,"package":50,"summary":51},"UF4SC120023B7S","TO-263-7","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 23 mohm",[53,56,59,62,65,69,72,75,78,81,84,87],{"pn_display":54,"pn_norm":54,"summary":55},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":57,"pn_norm":57,"summary":58},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":60,"pn_norm":60,"summary":61},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":63,"pn_norm":63,"summary":64},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":66,"pn_norm":67,"summary":68},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":70,"pn_norm":70,"summary":71},"NVBG075N065SC1","Silicon Carbide (SiC) MOSFET - 56 mohm, 650 V, M2, D2PAK-7L",{"pn_display":73,"pn_norm":73,"summary":74},"NVH4L015N065SC1","Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L",{"pn_display":76,"pn_norm":76,"summary":77},"NVH4L032N065M3S","Silicon Carbide (SiC) MOSFET",{"pn_display":79,"pn_norm":79,"summary":80},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":82,"pn_norm":82,"summary":83},"UF3C120400B7S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 410 mohm",{"pn_display":85,"pn_norm":85,"summary":86},"UG4SC075006K4S","Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, TO247‐4, 750 V, 5.9 mohm",{"pn_display":88,"pn_norm":88,"summary":89},"UJ3C120040K3S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 35 mohm"]